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Characterization of Luminescence in thick MgZnO Layers and MgZnO/ZnO Quantum Wells
|Frank Bertram 1, Daniel Forster , Juergen H. Christen 1, R. Kling 3, Th. Gruber 3, Andreas Waag 2|
1. Otto-von-Guericke-University Magdeburg, Universitaetsplatz 2, Magdeburg 39016, Germany
A series of MOCVD grown MgZnO epitaxial layers (1m thick) with increasing Mg incorporation on ZnO/GaN/sapphire substrate are investigated. No remarkable change of the morphology is found with increasing Mg-content. The laterally integrated cathodoluminescence (CL) spectrum of each sample is dominated by three spectral bands. Two bands at higher energies can be assigned to the MgZnO emission, i.e. for a [Mg] = 6% E1= 3.474eV and E2= 3.442eV at 5K. These two peaks are clearly separated from the ZnO emission (E= 3.356eV). The two MgZnO peaks shift simultaneously to higher energies with increasing Mg-content. Furthermore MgZnO/ZnO/MgZnO single quantum well (SQW) structures on ZnO/GaN/sapphire substrate are investigated and two additional luminescence lines appear clearly assignable to the 2nm thick single quantum well.
Presentation: oral at E-MRS Fall Meeting 2004, Symposium F, by Frank Bertram
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-04-30 15:01 Revised: 2009-06-08 12:55