Due to its specific optical and magnetic properties - ZnO seems to be a very versatile material platform in the field of optoelectronics, magnetoelectronics, and nanoelectronics. In particular, a self-organized growth mode can be initiated in order to fabricate ZnO nanopillars with a quite homogenous size distribution. ZnO nanostructures offer an unusual adventage: the surface oxidation obviously does not present a problem. Up to now, the work on the ZnO growth by MOVPE (important industrial standard) is relatively limited. Here, we report on the development of MOVPE technology in order to establish a basis for the exploitation of ZnO hetero- and nanostructures. While conventional precursors are available for the metal components (DEZn, Cp₂Mg), the choice of an adequate oxygen precursor for the growth of ZnO and ZnMgO is very important. We have used i-PrOH and t-BuOH for the low temperature growth (300÷500C), and N₂O for the high temperature growth (600÷950C). ZnO or sapphire have been used as substrates. The incorporation of Mg turns out to be difficult due to pronounced prereactions of the Mg precursor. With a careful process control, we were able to fabricate ZnMgO layers with Mg content of up to 9%, and to incorporate these as barriers in ZnMgO/ZnO quantum well structures. Now those barriers allow the fabrication of heterostructures, which include cladding and waveguide layers for optically pumped lasing. In addition, MOVPE can be used to initiate a growth mode resulting in the self-organized growth of ZnO nanopillars with a typical width of only 50 nm and a height of up to 5 μm. Despite small diameter, these free-standing nanopillars show intense PL spectra, with FWHM below 0.5 meV. HRXRD analysis shows that these nanopillars - depending on the growth mode - can be almost completely c-oriented. The fabrication of ZnMgO-ZnO based quantum well structures and nanostructures will be described, including an analysis of their structural and optical properties.

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2. ZnO nanostructures, thin films and devices
3. Time-resolved ODMR investigations of II-VI based DMS heterostructures
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6. Characterization of Luminescence in thick MgZnO Layers and MgZnO/ZnO Quantum Wells