ZnO based semiconductor devices are potentially interesting for optoelectronics in the UV and blue spectral range, transparent electronics, and magnetoelectronics operating at room temperature. An additional aspect of ZnO is the possibility to fabricate ZnO nanopillars by self-organisation. Due to the small footprint of nanopillars on the substrate, virtually any substrate can be used, while defect density remains small. ZnO thin films, ZnMgO-ZnO heterostructures and ZnO nanostructures were fabricated by molecular beam epitaxy (MBE), vapour phase transport (VPT) and aqeuous chemical growth approach (ACG). The possibility to employ several fabrication technologies is of special importance for realization of unique device structures. MBE was implemented for ZnO-based layers and heterostructures as well as ZnMgO-ZnO quantum wells growth. A novel advanced VPT approach of ZnO layers and nanopillars growth on sapphire, SiC, ZnO epitaxial layers, and even plastic and glass is developed. Low-cost and low temperature ACG fabrication of ZnO nanopillars on silicon, plastic, glass is also realized. The nanopillars arrays were patterned and also selective growth approach is demonstrated showing further step forward to ZnO-nanopillar-based device fabrication. Nanopillar fabrication technique is combined with MBE technology: MBE ZnMgO-ZnO quantum well structures were embedded into ZnO nanopillars presenting significant progress towards nano-LEDs realization.

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1. Cathodoluminescence study of wide band gap ZnO nanorod heterostructures.
2. Electrical characterization of ZnO nanorods
3. Fabrication of ZnO Nanorod-based Single Quantum Well Structures
4. ZnMgO-ZnO based Heterostructures and Nanopillars grown by MOVPE