Zinc oxide (ZnO), with its wide bandgap (~3.37eV) and high exciton binding energy (~60meV), is a promising material for use in optoelectronic and spintronic devices. ZnO growth by metal organic chemical vapor deposition (MOCVD) is a useful technique in because of its flexibility and scalability to larger commercial systems, provided it can consistently yield high-quality undoped, n-type, and p-type ZnO. This work presents results obtained from an investigation into factors affecting MOCVD growth of ZnO and the effects of transition metal incorporation on structural, optical, and magnetic properties of ZnO. DEZn and O₂ were used as the precursors in a vertical injection, rotating disk MOCVD reactor. Trends in materials properties were correlated to changes in growth parameters in order to build an understanding of the kinetics of ZnO growth by MOCVD. Total volume flow and injection velocity were found to significantly effect the growth kinetics and crystal quality. Undoped ZnO thin films have been produced that show both strong luminescence and good crystal quality as measured by X-ray diffraction and Raman spectroscopy. PL spectra show a strong luminescence peak around 3.28eV, suggesting that the dominant emission peak is due to an LO phonon replica of the band-to-band emission. XRD θ-2θ scans show a linewidth of 180 arcsec. Raman spectra showed the E₂(high) mode at 437cm^-1 while the 2^nd-order phonon mode near 332cm^-1 was of very low intensity. Initial results will also be presented on p-type doping and TM-doping of ZnO thin films by MOCVD.

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1. Comparative study of Mn and Fe incorporation into GaN by metalorganic chemical vapor deposition