Helium- and hydrogen- implanted single crystalline silicon have become of remarkable technological interest because of importance of He- and / or H2- filled microcavities created at annealing in Si:He and Si:H for producing the gettering active areas and for Si wafer splitting (Smart Cut process). The estimated pressure in the He/H2 filled bubbles is in the Giga Pascal (GPa) range [1] and defects of different kind and concentrations are created in annealed Si:He and Si:H. The shear stress at the H/He bubble / Si matrix boundary can be tuned by annealing the Si:H, Si:He and Si:H,He samples under enhanced hydrostatic pressure of inert gas ambient (HT-HP treatment [2]). The HT-HP treatment results, between others, in the decreased strain between the Si matrix and the He- or H -containing nanostructured layers and in creation of more numerous defects in Si:He [2,3]. The effect of HT-HP treatment on Si:He (prepared by Si implantation with He+ at energy, E, up to 300 keV, doses, D, up to '1x10¹⁷'cm^'{-2}' at up to 1270 K under hydrostatic Ar pressure up to 1.2 GPa was investigated in the present work by photoluminescence (PL), X-Ray, TEM and related methods. Among others it has been stated that enhanced HP at annealing of Fz-Si:He (E = 150 keV, D='2x10¹⁶'cm^'{-2}' at 1070-1270 K results in modified structure of the buried nanostructured layer promoting creation of dislocations (enhanced intensity of dislocation-related D1 PL line) and point defects clusters. Also the recently obtained results concerning the HT-HP treatment effect on Si:H,He structures will be presented and discussed.
Our investigations are currently supported (at 2002 - 2004) by the Polish Committee for Scientific Research (grant no. 4T08A 03423).

1. Xiang Lu, et al., Appl. Phys. Lett. 71 (1997) 1804.
2. A.Misiuk, et. al., Mater. Phys. Mech. 5 (2002) 31.
3. A.Misiuk, et al., Comput. Mater. Sci. 21 (2001) 515.

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