Time
|
Duration
|
Type
|
Presenting person
|
Title
|
September 17th, Monday |
|
09:15 |
00:45:00 |
Invited oral |
Valeriya Kilchytska |
Assessment of advanced SOI CMOS technologies for high-temperatrue applications |
10:00 |
00:30:00 |
Oral |
Steven A. Morris |
High temperature linear operation of paralleled power MOSFETs |
11:00 |
00:45:00 |
Invited oral |
Bruce W. Ohme |
Updated Results From DeepTrek High Temperature Electronics Development Programs |
11:45 |
00:30:00 |
Oral |
Bradley A. Reese |
High Temperature SOI/SiC Based Power Electronic Converters |
12:15 |
00:45:00 |
Invited oral |
Patrick Ledru |
ENhanced Geothermal Innovative Network for Europe: a cooperation action aiming at developing Unconventional Geothermal Resources |
14:00 |
00:45:00 |
Invited oral |
Ovidiu Vermesan |
Latest development in High Temperature electronics at SINTEF |
14:45 |
00:45:00 |
Invited oral |
Pierre Delatte |
A High Temperature General Purpose Operational Amplifier with 300µA bias current and 4.5V to 20V Supply Voltage in Partially Depleted CMOS SOI |
16:00 |
00:30:00 |
Oral |
Valeriya Kilchytska |
FinFETs perspectives for high-temperature applications |
16:30 |
00:30:00 |
Oral |
Renee G. Lerch |
DACS-HT – Data Acquisition and Control System for High-Temperature Applications |
17:00 |
00:30:00 |
Oral |
Marshall Soares |
Low power, high temperature design in an embedded RAM |
17:30 |
00:30:00 |
Oral |
Ovidiu Vermesan |
Design Considerations on Voltage Reference Generators for High Temperature Applications (-20°C To 200°C). |
September 18th, Tuesday |
|
09:00 |
00:45:00 |
Invited oral |
Mark Johnson |
Recent Developments and Future Prospects in Silicon Carbide Power Electronics |
09:45 |
00:45:00 |
Invited oral |
Randy A. Normann |
Developments in high temperature electronics for geothermal applications at Sandia National Labs |
11:00 |
00:30:00 |
Oral |
Ragnar K. Asmundsson |
High temperature instrumentation in geothermal fields at supercritical conditions of reservoir fluid |
11:30 |
00:30:00 |
Oral |
Arden P. Johnson |
Performance and performance limitations of high temperature batteries |
12:00 |
00:30:00 |
Oral |
Shane Rose |
A 225°C Rated ASIC for Quartz Downhole Pressure Transducers |
12:30 |
00:30:00 |
Oral |
Bertrand Rue |
A SOI CMOS smart high-temperature sensor |
14:00 |
00:45:00 |
Invited oral |
Wayne Johnson |
High Temperature Electronics Packaging |
14:45 |
00:30:00 |
Oral |
Stephen T. Riches |
Establishing Methodologies for the Assessment of the Reliability of High Temperature Electronics Packaging Technology |
16:00 |
00:30:00 |
Oral |
Robert Klieber |
Material characterization for packaging of high temperature integrated circuits |
16:30 |
00:30:00 |
Oral |
Milton Watts |
Circuit design for high temperature hybrid manufacturability |
17:00 |
00:30:00 |
Oral |
Bernhard Wunderle |
Failure Analysis of Microelectronic Packages by Pulse IR Thermography |
September 19th, Wednesday |
|
09:15 |
00:45:00 |
Invited oral |
Andy Longford |
Implementation of Lead(Pb) Free Interconnection in High Temperature Electronics |
10:00 |
00:30:00 |
Oral |
Samjid H. Mannan |
Liquid solders for high temperature electronics |
11:00 |
00:30:00 |
Oral |
Vitor Marques |
Lead free solders for aerospace applications |
11:30 |
00:30:00 |
Oral |
Froydis Oldervoll |
Long Term High Temperature Reliability of Aluminium Wire-Bonds to Thin Film, Thick Film and LTCC Substrate Metallizations |
12:00 |
00:30:00 |
Oral |
Burkhard Schelle |
Reliability testing of wire-bond at High Temperature Storage |
12:30 |
00:30:00 |
Oral |
Sazia Eliza |
An Analytical model of AlGaN/GaN HEMT for High Temperature DC and Microwave Applications |