Wide band gap semiconductors (such as SiC, GaN and Diamond) offer many superior physical properties compared to Silicon for high power and high temperature electronics. Due to its relatively mature wafer technology (compared to GaN and Diamond) and excellent thermal/electrical properties, SiC is on the verge of becoming the material of choice for high power electronics and it is increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21^st century. The inherent ability of SiC devices to operate at high temperatures and under high voltages (derived from the wide band-gap of ~3.2eV  - compared to ~1.1eV for Silicon) will facilitate technological advances in the aerospace and other transport sectors whilst grid-connected power electronic systems will benefit from improved efficiency and a reduced environmental footprint. A critical review of the current state-of-the-art in materials growth and device technologies is followed by an analysis of the most likely commercial applications for SiC. Current and potential future pinch points and threats to SiC technology are identified.

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