Arkansas Power Electronics International, Inc. (APEI, Inc.) researchers have developed a highly integrated SOI/SiC-based DC-DC converter capable of operation up to 300°C. The project is funded by NASA and is intended to increase the power density of satellite power management systems 3x greater than silicon based systems. Space launch costs are approximately $10,000/kg, which translates to about $2 million to launch a typical satellite power system. The implementation of a SiC based power system could reduce launch costs of such systems to less than $650k.

APEI, Inc. developed a high temperature SOI-based PWM controller for the converter featuring 150kHz operation, a PID feedback loop, maximum duty cycle limit, complementary or symmetrical outputs, and a bootstrapped high side gate driver. Several passive technologies were investigated for both control and power sections. Resistor and capacitor technologies were characterized over temperature and over time at 300°C, power inductors designed and tested up to 350°C, and power transformers designed and tested up to 500°C. Northrop Grumman normally-off SiC JFETs were used as power switches and were operated to a junction temperature over 300°C. This paper will address the complete design of the converter, component testing, and high temperature packaging solutions (e.g. substrates, power packages, etc.)

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