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Distribution of strain in GaN and SiC nanocrystals under extreme pressures

Bogdan F. Palosz 7,  Stanisław Gierlotka 7,  Ewa Grzanka 6,7,  Konrad Akimow 5,7,  Roman Pielaszek 6,7,  Piotr Biczyk ,  Andrzej Grzegorczyk 5,  Svitlana Stelmakh 7,  Ulrich Bismayer 2,  J. F. Janik 3

1. Warsaw University, Faculty of Physics, Hoża 69, Warszawa 00-681, Poland
2. University of Hamburg, Mineralogisch-Pertographisches Institut, Hamburg, Germany
3. AGH University of Science and Technology (AGH), al. Mickiewicza 30, Kraków 30-059, Poland
4. Polish Academy of Sciences, High Pressure Research Center (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
5. Warsaw University of Technology, Department of Technical Physics and Applied Mathematics, Warszawa, Poland
6. Warsaw University, Faculty of Physics, Hoża 69, Warszawa 00-681, Poland
7. Polish Academy of Sciences, High Pressure Research Center (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland

Abstract

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Presentation: - at NANO Ceramics and Grain Boundaries Lab, by Bogdan F. Palosz
See On-line Journal of NANO Ceramics and Grain Boundaries Lab

Submitted: 2003-02-16 17:33
Revised:   2009-06-08 12:55