This session will concern studies of the mechanisms of defect formation in single crystals as well as strategies adopted for the “engineering” of the configurations of the various defects with a view to their elimination. Papers involving post mortem studies of defects in wafers cut from as-grown crystals as well as in situ studies are encouraged. Papers are anticipated highlighting the application of the following techniques to such problems: X-ray topography, electron microscopy, and defect etching. Papers demonstrating the application of other techniques are also encouraged.


Invited speakers (confirmed):

Yasufumi Fujiwara (Osaka University, Japan)
Development of properties and functionalities by precise control of rare earth doping

Jacques Rabier (University of Poitiers, France)
Nucleation and dislocations cores in semi conductors: from macrostructures to nanostructures

Balaji Raghothamachar (Stony Brook University, USA)
Synchrotron Topography Studies of the Operation of Double-Ended Frank-Read Partial Dislocation Sources in 4H-SiC

Kevin L. Schulte (University of Wisconsin-Madison, USA)
Thick metamorphic buffer layers grown by hydride vapor phase epitaxy as platforms for novel semiconductor devices

Maria Tsoutsouva (European Synchrotron Radiation Facility, France)
Imaging defects during growth of seeded directionally solidified mono-like silicon for photovoltaic applications


Andreas Danilewsky  (Germany) a.danilewsky@krist.uni-freiburg.de
Michael Dudley  (USA) mdudley@notes.cc.sunysb.edu
Thierry Duffar  (France) IUCr representative thierry.duffar@grenoble-inp.fr