Finite element modelling of nonlinear elastic and piezoelectric properties of InN and InGaN QDs

Paweł Dłużewski 1Grzegorz Jurczak 1Pierre Ruterana 2,4S. P. Lepkowski 3

1. Polish Academy of Sciences, Institute of Fundamental Technological Research (IPPT PAN), Świętokrzyska 21, Warszawa 00-049, Poland
2. Laboratoire CRISMAT - UMR 6508, ISMRA et Universite de Caen, 6 Boulevard de Marechal JUIN, Caen 14050, France
3. Polish Academy of Sciences, Institute of High Pressure Physics (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
4. SIFCOM, UMR6176, CNRS-ENSICAEN, 6 Bld Maréchal Juin, Caen 14050, France


We investigate elastic and electric properties of wurtzite InGaN/GaN heterostructures with inhomogeneous indium composition. Distortion field and continuous fluctuation of chemical composition extracted by means of digital processing of the HRTEM images are used as the input data for the nonlinear FE calculations. This data are input to FE mesh in the form of nodal variables for extended nodal freedom degrees taking into account the fixed: nodal source distortions, chemical distribution and electric charge distribution as well as the wanted: nodal displacements and electrostatic potential distribution. To model a whole considered crystal region we use 27-node (brick) elements with quadratic shape functions assuring the compatibility condition between coupled fields (source distortions, displacements, chemical composition and electrostatic potential). This is an essential condition to avoid the extra effects including artificial residual stresses and caused by FE incompatibilities. We solve a boundary-value problem for piezoelectricity to calculate residual stresses and strains existing in a such heterostructure for the given (fixed) electric charge distribution. We obtain also the resulting electrostatic potential distribution. To do this we use finite element method based on nonlinear anisotropic piezoelectricity. During calculation we take into account piezoelectric polarization as well as the spontaneous polarisation of the wurtzite crystals.


Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. Investigation of InN layers grown by molecular beam epitaxy on Si or GaN templates
  2. Structural properties of InAlN thin layers for HEMT applications
  3. Low frequency noise measurements in InN films
  4. The microstructure and properties of InN layers
  5. Role of threading dislocations on Indium distribution in InGaN alloys
  6. Optical properties of InN grown on Si(111) substrate
  7. Ferromagnetism in transition-metal doped ZnS
  8. Electronic and magnetic properties of Co-doped ZnO: first principles study
  9. Molecular statics simulation of nanoindentation on nanocrystalline copper
  10. Method of Manganese co-doping of LT ZnO films
  11. Formation of precipitates in Mn doped ZnO layers deposited by magnetron sputtering
  12. The structure of nucleation Zn(Al)O layers for transparent metal oxide application
  13. First-principles calculations of the optical band-gap properties of Mg1-xZnxO alloys
  14. Theoretical studies of ZnS1-xOx alloy band structures
  15. FE and MD simulation of InGaN QD formation induced by stress field of threading dislocations
  16. Strain Relaxation Effect on the Properties of Ultra Thin ZnO Film on Sapphire (0001) Substrates by Pulsed Laser Deposition
  17. Low and high indium fluctuation in MOCVD grown InGaN/GaN as determined by quantitative HRTEM
  18. A hybrid atomistic-continuum finite element modelling of locally disordered crystalline structure
  19. Structural analysis of the behaviour of the ultrathin AlN capping layer interface during the RE implantation and annealing of GaN for electroluminescence applications
  20. Energy and electronic structure of gallium and nitrogen interstitials in GaN Tilt Boundaries
  21. Investigation of InN layers grown by MOCVD and MBE using analytical and high resolution TEM
  22. Interfacial diffusion and precipitation in rf magnetron sputtered Mn doped ZnO layers
  23. The atomic configuration of tilt grain boundaries around <0001> in GaN
  24. First principles study of electronic structure of InN and AlN substitution atomic layers embedded in GaN
  25. Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN
  26. Image processing of HREM micrograph for determination size distribution of Co nanocrystals in Cu matrix
  27. Quantitative study of Cd atoms distribution in CdTe/ZnTe quantum dots superlattice by HRTEM
  28. Modeling of elastic, piezoelectric and optical properties of vertically correlated GaN/AlN quantum dots
  29. The atomic structure of defects formed during doping of GaN with rare earth ions
  30. Transmission electron microscopy structural investigations of Tm implanted GaN
  31. Study of photo- and electro-luminescence related with Er3+ ions in GaN:Er
  32. Quantitative transmission electron microscopy investigation of localised stress in heterostructures
  33. Surprisingly low built-in electric fields in quaternary InAlGaN heterostructures
  34. Modelling of indium rich clusters in MOCVD InGaN/GaN multilayers

Presentation: invited oral at E-MRS Fall Meeting 2005, Symposium A, by Paweł Dłużewski
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-30 14:49
Revised:   2009-06-07 00:44