Investigation of InN layers grown by MOCVD and MBE using analytical and high resolution TEM
|Pierre Ruterana , Morad Abouzaid|
SIFCOM, UMR6176, CNRS-ENSICAEN, 6 Bld Maréchal Juin, Caen 14050, France
Among the nitride semiconductors InN, shows the smallest effective mass and the highest electron drift velocity thus setting it as a candidate for applications in ultrahigh speed electronic devices. The band gap of 0.7 eV obtained for InN makes it also suited for high efficiency solar cells. In good quality layers hall mobility of 1000 cm2/s and residual carrier concentrations as low as 1018 /cm3 have been reported.
Presentation: poster at E-MRS Fall Meeting 2005, Symposium A, by Pierre Ruterana
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-20 16:27 Revised: 2009-06-07 00:44
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