Among the nitride semiconductors InN, shows the smallest effective mass and the highest electron drift velocity thus setting it as a candidate for applications in ultrahigh speed electronic devices. The band gap of 0.7 eV obtained for InN makes it also suited for high efficiency solar cells. In good quality layers hall mobility of 1000 cm²/s and residual carrier concentrations as low as 10¹8 /cm³ have been reported.
In this work we investigate the microstructure of InN layers grown by MOCVD on different buffer layers using TEM (AlN, directly on sapphire, GaN). The polarity of the layers is determined by Convergent Beam Electron Diffraction (CBED). We analyze the typical defects that form in these layers as well as the interfacial relationships between the substrate/buffer and active layers at atomic scale. The large mismatch between InN and sapphire or GaN leads to particular interface structures which critically depend on the growth conditions. It has been possible to point out typical interface structures from optimized growth conditions, and this will be discussed in the light of the PL emission intensity and peak position.
In MBE layers, we also confirm the growth polarity of the layers and it is pointed out that the layers contain a huge amount of dislocations, but no In precipitates, by cross section and planar view observations.
Our local analysis at atomic scale allows to clearly detemine the origin of the PL emission below 0.8 eV as related to the local chemical composition and structure of the InN layers.

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1. Investigation of InN layers grown by molecular beam epitaxy on Si or GaN templates
2. Structural properties of InAlN thin layers for HEMT applications
3. Low frequency noise measurements in InN films
4. The microstructure and properties of InN layers
5. Role of threading dislocations on Indium distribution in InGaN alloys
6. Optical properties of InN grown on Si(111) substrate
7. Ferromagnetism in transition-metal doped ZnS
8. Electronic and magnetic properties of Co-doped ZnO: first principles study
9. Method of Manganese co-doping of LT ZnO films
10. Formation of precipitates in Mn doped ZnO layers deposited by magnetron sputtering
11. The structure of nucleation Zn(Al)O layers for transparent metal oxide application
12. First-principles calculations of the optical band-gap properties of Mg_1-xZn_xO alloys
13. Theoretical studies of ZnS_1-xO_x alloy band structures
14. FE and MD simulation of InGaN QD formation induced by stress field of threading dislocations
15. Strain Relaxation Effect on the Properties of Ultra Thin ZnO Film on Sapphire (0001) Substrates by Pulsed Laser Deposition
16. Low and high indium fluctuation in MOCVD grown InGaN/GaN as determined by quantitative HRTEM
17. Finite element modelling of nonlinear elastic and piezoelectric properties of InN and InGaN QDs
18. Structural analysis of the behaviour of the ultrathin AlN capping layer interface during the RE implantation and annealing of GaN for electroluminescence applications
19. Energy and electronic structure of gallium and nitrogen interstitials in GaN Tilt Boundaries
20. Interfacial diffusion and precipitation in rf magnetron sputtered Mn doped ZnO layers
21. The atomic configuration of tilt grain boundaries around <0001> in GaN
22. First principles study of electronic structure of InN and AlN substitution atomic layers embedded in GaN
23. Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN
24. Image processing of HREM micrograph for determination size distribution of Co nanocrystals in Cu matrix
25. Quantitative study of Cd atoms distribution in CdTe/ZnTe quantum dots superlattice by HRTEM
26. The atomic structure of defects formed during doping of GaN with rare earth ions
27. Transmission electron microscopy structural investigations of Tm implanted GaN
28. Study of photo- and electro-luminescence related with Er³⁺ ions in GaN:Er
29. Quantitative transmission electron microscopy investigation of localised stress in heterostructures
30. Modelling of indium rich clusters in MOCVD InGaN/GaN multilayers