Epitaxy Control and Characterization of InN, InN-based Ternary Alloys, and Their MQW-structures
Determination of concentration, strain and internal electric fields in InN and InGaN quantum well and quantum dot structures
Ultra-thin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
Band Structure and Properties of InN and In-rich In1-xGaxN Alloys
Valence band structure of InN from x-ray photoemission studies
Plasmonic effects in InN-based structures with nano-clusters of metallic indium
Dielectric function of InN: Nonparabolicity and excitonic effects
Band transitions in the InGaN system
Electron band structure and optical properties of InN and related alloys
Optical anisotropy of InN from near-IR to deep-UV
THEORETICAL INVESTIGATION OF THE InN BAND GAP ANOMALY
Localized donor states resonant with the conduction band in InN and GaN
Surface band bending at n-type and p-type InN by Auger Electron Spectroscopy
Multiple photoluminescence peaks from mixed-phase indium nitride thin films
Acceptor states in photluminescence of n-InN
Stoichiometry related point defects in InN
Recombination processes with and without momentum conservation in degenerate InN
Superconductivity of InN
Quantized Electron Accumulation, Inversion Layers and Fermi Level-Stabilization in Indium Nitride
Growth and properties of InN, InGaN, and InN/InGaN quantum wells
InGaN and InAlN alloys grown in the entire composition range by plasma assisted molecular beam epitaxy
RF plasma sources for III-nitrides growth: influence of operating conditions and device geometry on active species production and InN film properties
Properties of MBE-grown InN (0001) films
MOVPE growth of InN on Sapphire
Inhomogeneities in MOVPE InN
InN Polycrystalline Films: Growth, Structure and Optical Characterization
Single crystalline InN nanorods by H-MOVPE
Characterization of chrystallographic properties and defects via X-ray microdiffraction in GaN(0001) layers
Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells
Structural and optical characterization of thick InN epilayers grown on GaN templates by plasma assisted molecular beam epitaxy
Compositional modulation in the InxGa1-xN layers; relation to their optical properties
Does electron microscopy produce In clustering in InGaN?
Low and high indium fluctuation in MOCVD grown InGaN/GaN as determined by quantitative HRTEM
Quantitative Electron Microscopy of the InN-GaN Ternary Alloy System
Finite element modelling of nonlinear elastic and piezoelectric properties of InN and InGaN QDs
Strain state analysis of InGaN/GaN – sources of error and optimized imaging conditions
III-Nitrides semiconductor compounds for microwave devices
Indium Nitride: A Material with Photovoltaic Promise and Challenges
