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Structural analysis of the behaviour of the ultrathin AlN capping layer interface during the RE implantation and annealing of GaN for electroluminescence applications
|Pierre Ruterana 1, Tomasz Wόjtowicz 1, Florence Gloux 1, Katharina Lorenz , Eduardo Alves|
1. SIFCOM, UMR6176, CNRS-ENSICAEN, 6 Bld Maréchal Juin, Caen 14050, France
Since the last few years due to many optoelectronic and photonic applications an increased interest in rare earth (RE) doped semiconductors has been observed. One of the effective techniques of RE incorporation in GaN is ion implantation, however it contributes to creation of a considerable amount of structural defects. Their negative impact can be removed by post implantation high temperature annealing which results in optical activation of rare earth ions. Unfortunately high temperature annealing leads to the decomposition of the GaN surface. In order to avoid this decomposition, a number of solutions have been proposed i.e. use of GaN proximity cap, annealing under high N2 overpressure (>10×1010 Pa), and recently implantation through a thin AlN cap layer epitaxially grown on top of GaN. By Rutherford backscattering and channeling (RBS/C), it was shown that the presence of the AlN layer allowed decreasing the implantation damage. It also provided an efficient way to protect the GaN surface for high temperature annealing.
Presentation: oral at E-MRS Fall Meeting 2005, Symposium F, by Florence Gloux
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-28 15:34 Revised: 2009-06-07 00:44