science24.com - Pierre Ruterana

Pierre Ruterana

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phone:	+33 2 31 45 26 53
fax:	+33 2 31 45 26 60
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interest(s):

Affiliation:

SIFCOM, UMR6176, CNRS-ENSICAEN

address:	6 Bld Maréchal Juin, Caen, 14050, France
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Participant:

E-MRS Fall Meeting 2005

began:	2005-09-05
ended:	2005-09-09
Presented:

E-MRS Fall Meeting 2005	Investigation of InN layers grown by MOCVD and MBE using analytical and high resolution TEM
E-MRS Fall Meeting 2005	Low and high indium fluctuation in MOCVD grown InGaN/GaN as determined by quantitative HRTEM
E-MRS Fall Meeting 2005	Interfacial diffusion and precipitation in rf magnetron sputtered Mn doped ZnO layers

Participant:

E-MRS Fall Meeting 2006

began:	2006-09-04
ended:	2006-09-08
Presented:

E-MRS Fall Meeting 2006	Formation of precipitates in Mn doped ZnO layers deposited by magnetron sputtering
E-MRS Fall Meeting 2006	The structure of nucleation Zn(Al)O layers for transparent metal oxide application

Publications:

FE and MD simulation of InGaN QD formation induced by stress field of threading dislocations
First-principles calculations of the optical band-gap properties of Mg_1-xZn_xO alloys
Formation of precipitates in Mn doped ZnO layers deposited by magnetron sputtering
Image processing of HREM micrograph for determination size distribution of Co nanocrystals in Cu matrix
Method of Manganese co-doping of LT ZnO films
Modelling of indium rich clusters in MOCVD InGaN/GaN multilayers
Energy and electronic structure of gallium and nitrogen interstitials in GaN Tilt Boundaries
Finite element modelling of nonlinear elastic and piezoelectric properties of InN and InGaN QDs
First principles study of electronic structure of InN and AlN substitution atomic layers embedded in GaN
Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN
Interfacial diffusion and precipitation in rf magnetron sputtered Mn doped ZnO layers
Investigation of InN layers grown by MOCVD and MBE using analytical and high resolution TEM
Low and high indium fluctuation in MOCVD grown InGaN/GaN as determined by quantitative HRTEM
Structural analysis of the behaviour of the ultrathin AlN capping layer interface during the RE implantation and annealing of GaN for electroluminescence applications
The atomic configuration of tilt grain boundaries around <0001> in GaN
Quantitative study of Cd atoms distribution in CdTe/ZnTe quantum dots superlattice by HRTEM
Quantitative transmission electron microscopy investigation of localised stress in heterostructures
Strain Relaxation Effect on the Properties of Ultra Thin ZnO Film on Sapphire (0001) Substrates by Pulsed Laser Deposition
Study of photo- and electro-luminescence related with Er³⁺ ions in GaN:Er
The atomic structure of defects formed during doping of GaN with rare earth ions
Theoretical studies of ZnS_1-xO_x alloy band structures
The structure of nucleation Zn(Al)O layers for transparent metal oxide application
Transmission electron microscopy structural investigations of Tm implanted GaN