Study of photo- and electro-luminescence related with Er3+ ions in GaN:Er

Maciej Wojdak 2Alain Braud 2Jean Louis Doualan 2Richard Moncorgé 2Tomasz Wojtowicz 3Pierre Ruterana 3Philippe MARIE 3Alban Colder 3Hock Min Ng 1

1. Lucent Technologies Bell Laboratories (Bell Labs), 600 Mountain Avenue, Murray Hill, NJ 07974, United States
2. CIRIL-ENSICAEN, 6 Bld Maréchal Juin, Caen 14050, France
3. SIFCOM, UMR6176, CNRS-ENSICAEN, 6 Bld Maréchal Juin, Caen 14050, France


Semiconductors doped with erbium are attractive materials for optoelectronic devices due to the fact that characteristic Er3+ emissions meet technologically important spectral ranges, and semiconductor host provides the possibility of electrical excitation. Due to low thermal quenching of erbium luminescence, GaN:Er was recently extensively studied and devices based on this material were demonstrated. However, the optimization of the emission requires a better understanding of the excitation mechanisms.

We studied infrared and green erbium photoluminescence (PL) of MBE-grown GaN:Er with above- and below-band-gap excitation methods. In the latter case, the excitation wavelengths resonant and nonresonant with Er3+ transitions were also used. The PL spectra obtained in these conditions are similar, but the decay kinetics change with the excitation method. This enables us to distinguish emissions related with isolated and defect-coupled Er3+ centers.

To obtain the electroluminescence (EL) electrical contacts were made, and characteristic infrared and green emissions of Er3+ were observed. Electrical characteristics of this device and the dependence of its emission on the current and temperature were studied.

When electrical and optical excitations are combined, we observe that electroluminescence is altered by additional illumination. The below-band-gap illumination leads to a slight enhancement of EL, while with above-band-gap illumination very strong quenching of EL is observed. This indicates that both excitation mechanisms proceed via common steps within the excitation path, and as a result, they are perturbed by each other.


Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. Investigation of InN layers grown by molecular beam epitaxy on Si or GaN templates
  2. Structural properties of InAlN thin layers for HEMT applications
  3. Low frequency noise measurements in InN films
  4. The microstructure and properties of InN layers
  5. Role of threading dislocations on Indium distribution in InGaN alloys
  6. Optical properties of InN grown on Si(111) substrate
  7. Ferromagnetism in transition-metal doped ZnS
  8. Electronic and magnetic properties of Co-doped ZnO: first principles study
  9. Method of Manganese co-doping of LT ZnO films
  10. Formation of precipitates in Mn doped ZnO layers deposited by magnetron sputtering
  11. The structure of nucleation Zn(Al)O layers for transparent metal oxide application
  12. First-principles calculations of the optical band-gap properties of Mg1-xZnxO alloys
  13. Theoretical studies of ZnS1-xOx alloy band structures
  14. FE and MD simulation of InGaN QD formation induced by stress field of threading dislocations
  15. Strain Relaxation Effect on the Properties of Ultra Thin ZnO Film on Sapphire (0001) Substrates by Pulsed Laser Deposition
  16. Low and high indium fluctuation in MOCVD grown InGaN/GaN as determined by quantitative HRTEM
  17. Finite element modelling of nonlinear elastic and piezoelectric properties of InN and InGaN QDs
  18. Structural analysis of the behaviour of the ultrathin AlN capping layer interface during the RE implantation and annealing of GaN for electroluminescence applications
  19. Energy and electronic structure of gallium and nitrogen interstitials in GaN Tilt Boundaries
  20. Investigation of InN layers grown by MOCVD and MBE using analytical and high resolution TEM
  21. Interfacial diffusion and precipitation in rf magnetron sputtered Mn doped ZnO layers
  22. The atomic configuration of tilt grain boundaries around <0001> in GaN
  23. First principles study of electronic structure of InN and AlN substitution atomic layers embedded in GaN
  24. Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN
  25. Image processing of HREM micrograph for determination size distribution of Co nanocrystals in Cu matrix
  26. Quantitative study of Cd atoms distribution in CdTe/ZnTe quantum dots superlattice by HRTEM
  27. The atomic structure of defects formed during doping of GaN with rare earth ions
  28. Transmission electron microscopy structural investigations of Tm implanted GaN
  29. Quantitative transmission electron microscopy investigation of localised stress in heterostructures
  30. Fabrication and characterization of SiC/Si heterojunction diode.
  31. Modelling of indium rich clusters in MOCVD InGaN/GaN multilayers

Presentation: oral at E-MRS Fall Meeting 2004, Symposium C, by Maciej Wojdak
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-28 15:19
Revised:   2009-06-08 12:55