Strain Relaxation Effect on the Properties of Ultra Thin ZnO Film on Sapphire (0001) Substrates by Pulsed Laser Deposition

Chunli Liu 1Seohyoung Chang 1TaeWon Noh 1Morad Abouzaid 2Pierre Ruterana 2

1. ReCOE and FPRD, School of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea, South
2. SIFCOM, UMR6176, CNRS-ENSICAEN, 6 Bld Maréchal Juin, Caen 14050, France


In ZnO/sapphire (0001) heteroepitaxy, the properties of the ZnO thin films are ultimately affected by the biaxial strain induced by the lattice mismatch. In this work the strain relaxation process in the initial growth stage of ZnO/sapphire (001) by PLD and its effect on the film properties have been investigated. Detailed structural evolution of ZnO films was carried out using XRD and TEM. At low temperature and high O2 pressure, the strain is released at the very early stage of growth by roughening the film surface and forming 3D islands. TEM analysis showed a columnar growth mode, and the existence of two types of in-plane rotation domains, ZnO [10-10]//sapphire [10-10] and ZnO[11-20]// sapphire [10-10]. Interestingly, the films grown at high temperature and low O2 pressure exhibit (0002) rocking curves dominated by a sharp peak with FWHM of 0.02 degree, and a single in-plane orientation ZnO[11-20]// sapphire [10-10]. TEM investigation revealed also highly crystalline layers which contain only basal stacking faults. This improved crystalline quality at optimized growth condition is induced by a much slower strain relaxation, so that the ZnO epitaxial layer is aligned to the lattice of the underlying sapphire substrate.


Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. Investigation of InN layers grown by molecular beam epitaxy on Si or GaN templates
  2. Structural properties of InAlN thin layers for HEMT applications
  3. Low frequency noise measurements in InN films
  4. The microstructure and properties of InN layers
  5. Role of threading dislocations on Indium distribution in InGaN alloys
  6. Optical properties of InN grown on Si(111) substrate
  7. Ferromagnetism in transition-metal doped ZnS
  8. Electronic and magnetic properties of Co-doped ZnO: first principles study
  9. Simple Method Synthesis of Visible Light Active N-Doped TiO2 Photocatalytic Nanoparticle
  10. Method of Manganese co-doping of LT ZnO films
  11. Formation of precipitates in Mn doped ZnO layers deposited by magnetron sputtering
  12. The structure of nucleation Zn(Al)O layers for transparent metal oxide application
  13. First-principles calculations of the optical band-gap properties of Mg1-xZnxO alloys
  14. Theoretical studies of ZnS1-xOx alloy band structures
  15. FE and MD simulation of InGaN QD formation induced by stress field of threading dislocations
  16. Low and high indium fluctuation in MOCVD grown InGaN/GaN as determined by quantitative HRTEM
  17. Finite element modelling of nonlinear elastic and piezoelectric properties of InN and InGaN QDs
  18. Structural analysis of the behaviour of the ultrathin AlN capping layer interface during the RE implantation and annealing of GaN for electroluminescence applications
  19. Energy and electronic structure of gallium and nitrogen interstitials in GaN Tilt Boundaries
  20. Investigation of InN layers grown by MOCVD and MBE using analytical and high resolution TEM
  21. Interfacial diffusion and precipitation in rf magnetron sputtered Mn doped ZnO layers
  22. The atomic configuration of tilt grain boundaries around <0001> in GaN
  23. First principles study of electronic structure of InN and AlN substitution atomic layers embedded in GaN
  24. Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN
  25. Image processing of HREM micrograph for determination size distribution of Co nanocrystals in Cu matrix
  26. Quantitative study of Cd atoms distribution in CdTe/ZnTe quantum dots superlattice by HRTEM
  27. The atomic structure of defects formed during doping of GaN with rare earth ions
  28. Transmission electron microscopy structural investigations of Tm implanted GaN
  29. Study of photo- and electro-luminescence related with Er3+ ions in GaN:Er
  30. Quantitative transmission electron microscopy investigation of localised stress in heterostructures
  31. Modelling of indium rich clusters in MOCVD InGaN/GaN multilayers

Presentation: Poster at E-MRS Fall Meeting 2006, Symposium F, by Chunli Liu
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-14 09:36
Revised:   2009-06-07 00:44