The atomic structure of defects formed during doping of GaN with rare earth ions

Tomasz Wojtowicz 3Pierre Ruterana 3K. Lorenz 1U. Wahl 1E. Alves 1G. Halambalakis 2Olivier Briot 2S. Rufenach 2

1. Instituto Técnológico Nuclear (ITN), Sacavém 2686, Portugal
2. Groupe d'Etude des Semiconducteurs, CNRS-UMR 5650, Universite de Montpellier 2, 12 Place Eugene Bataillon, Montpellier 24095, France
3. SIFCOM, UMR6176, CNRS-ENSICAEN, 6 Bld Maréchal Juin, Caen 14050, France

Abstract

Transmission electron microscopy (TEM) is an unique technique to perform structural investigations with atomic resolution. In this work we present our studies on structure changes of GaN doped with different rare earth ions (RE) by ion implantation and molecular beam epitaxy (MBE). Due to its wide and direct band gap GaN is an ideal host material for RE ions that have very interesting optical properties. Changing RE we can obtain luminescence covering the whole visible light spectrum. We present the influence of different doping conditions using each technique on the characteristic stacking faults formation. We take into account different RE and their concentration. For MBE doped layers, we notice that the increase of the RE concentration above a threshold leads to the disruption of the GaN stacking sequences. We investigate the connection of this disruption with possible RE segregation by measuring the local lattice parameter changes by HRTEM. During doping by implantation, typical stacking faults are formed around the projected stopping power. We present their detailed investigation and we analyze their evolution versus implantation dose (1014-1016 at/cm2) and energy (150-300 kV).

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/1926 must be provided.

 

Related papers
  1. Investigation of InN layers grown by molecular beam epitaxy on Si or GaN templates
  2. Structural properties of InAlN thin layers for HEMT applications
  3. Low frequency noise measurements in InN films
  4. The microstructure and properties of InN layers
  5. Role of threading dislocations on Indium distribution in InGaN alloys
  6. Optical properties of InN grown on Si(111) substrate
  7. Ferromagnetism in transition-metal doped ZnS
  8. Electronic and magnetic properties of Co-doped ZnO: first principles study
  9. Recent advances in the MOVPE growth of Indium Nitride
  10. Method of Manganese co-doping of LT ZnO films
  11. Formation of precipitates in Mn doped ZnO layers deposited by magnetron sputtering
  12. The structure of nucleation Zn(Al)O layers for transparent metal oxide application
  13. First-principles calculations of the optical band-gap properties of Mg1-xZnxO alloys
  14. Theoretical studies of ZnS1-xOx alloy band structures
  15. FE and MD simulation of InGaN QD formation induced by stress field of threading dislocations
  16. Strain Relaxation Effect on the Properties of Ultra Thin ZnO Film on Sapphire (0001) Substrates by Pulsed Laser Deposition
  17. Low and high indium fluctuation in MOCVD grown InGaN/GaN as determined by quantitative HRTEM
  18. Finite element modelling of nonlinear elastic and piezoelectric properties of InN and InGaN QDs
  19. Structural analysis of the behaviour of the ultrathin AlN capping layer interface during the RE implantation and annealing of GaN for electroluminescence applications
  20. Energy and electronic structure of gallium and nitrogen interstitials in GaN Tilt Boundaries
  21. Investigation of InN layers grown by MOCVD and MBE using analytical and high resolution TEM
  22. Interfacial diffusion and precipitation in rf magnetron sputtered Mn doped ZnO layers
  23. The atomic configuration of tilt grain boundaries around <0001> in GaN
  24. First principles study of electronic structure of InN and AlN substitution atomic layers embedded in GaN
  25. Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN
  26. Image processing of HREM micrograph for determination size distribution of Co nanocrystals in Cu matrix
  27. Quantitative study of Cd atoms distribution in CdTe/ZnTe quantum dots superlattice by HRTEM
  28. Transmission electron microscopy structural investigations of Tm implanted GaN
  29. Study of photo- and electro-luminescence related with Er3+ ions in GaN:Er
  30. Quantitative transmission electron microscopy investigation of localised stress in heterostructures
  31. Modelling of indium rich clusters in MOCVD InGaN/GaN multilayers

Presentation: poster at E-MRS Fall Meeting 2004, Symposium C, by Tomasz Wojtowicz
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-30 11:11
Revised:   2009-06-08 12:55
Google
 
Web science24.com
© 1998-2022 pielaszek research, all rights reserved Powered by the Conference Engine