Formation of precipitates in Mn doped ZnO layers deposited by magnetron sputtering

Morad Abouzaid 1Pierre Ruterana 1C. Liu Hadis Morkoc 2

1. SIFCOM, UMR6176, CNRS-ENSICAEN, 6 Bld Maréchal Juin, Caen 14050, France
2. Virginia Commonwealth University (VCU), Department of Electrical Engineering, Richmond, VA, United States


Transition-metal-doped ZnO is attracting the attention of researchers as a promising diluted magnetic semiconductor (DMS) material for its use in spintronics. Based on the prediction of Dietl et al., considerable effort has been focused on achieving reliable ZnO-based DMS with a Curie temperature above room temperature by doping with transition metals, especially Mnand Co.However, doping ZnO layers with these transition metals atoms may lead to the formation of various interphase precipitates, which may have magnetic properties. One of the easiest and low cost deposition method for introducing high doses of nitrogen may be deposition by rf sputtering. However, the deposited layers may be of poorer crystalline quality when doped with transition metals, and the existence of structural imperfections can impede the clarification of experimentally observed ferromagnetism in DMS materials. In this work, our aim is to develop a better understanding of the observed magnetic behaviour by carrying out a detailed microstructural analysis of Mn-doped ZnO thin films. In samples which show a ferromagnetic effect, we also observed numerous precipitates. We will report on their relationship with the deposition conditions, as well as their connection to the measured magnetic properties.


Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. New Twists in LEDs and HFETs based on Nitride Semiconductors
  2. Investigation of InN layers grown by molecular beam epitaxy on Si or GaN templates
  3. Structural properties of InAlN thin layers for HEMT applications
  4. Low frequency noise measurements in InN films
  5. The microstructure and properties of InN layers
  6. Role of threading dislocations on Indium distribution in InGaN alloys
  7. Optical properties of InN grown on Si(111) substrate
  8. Ferromagnetism in transition-metal doped ZnS
  9. Electronic and magnetic properties of Co-doped ZnO: first principles study
  10. Preparation and properties of ZnO based heterogeneous devices
  11. Method of Manganese co-doping of LT ZnO films
  12. The structure of nucleation Zn(Al)O layers for transparent metal oxide application
  13. First-principles calculations of the optical band-gap properties of Mg1-xZnxO alloys
  14. Theoretical studies of ZnS1-xOx alloy band structures
  15. FE and MD simulation of InGaN QD formation induced by stress field of threading dislocations
  16. Strain Relaxation Effect on the Properties of Ultra Thin ZnO Film on Sapphire (0001) Substrates by Pulsed Laser Deposition
  17. Low and high indium fluctuation in MOCVD grown InGaN/GaN as determined by quantitative HRTEM
  18. Finite element modelling of nonlinear elastic and piezoelectric properties of InN and InGaN QDs
  19. Structural analysis of the behaviour of the ultrathin AlN capping layer interface during the RE implantation and annealing of GaN for electroluminescence applications
  20. Energy and electronic structure of gallium and nitrogen interstitials in GaN Tilt Boundaries
  21. Investigation of InN layers grown by MOCVD and MBE using analytical and high resolution TEM
  22. Interfacial diffusion and precipitation in rf magnetron sputtered Mn doped ZnO layers
  23. The atomic configuration of tilt grain boundaries around <0001> in GaN
  24. First principles study of electronic structure of InN and AlN substitution atomic layers embedded in GaN
  25. Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN
  26. Image processing of HREM micrograph for determination size distribution of Co nanocrystals in Cu matrix
  27. Quantitative study of Cd atoms distribution in CdTe/ZnTe quantum dots superlattice by HRTEM
  28. The atomic structure of defects formed during doping of GaN with rare earth ions
  29. Transmission electron microscopy structural investigations of Tm implanted GaN
  30. Study of photo- and electro-luminescence related with Er3+ ions in GaN:Er
  31. Quantitative transmission electron microscopy investigation of localised stress in heterostructures
  32. Modelling of indium rich clusters in MOCVD InGaN/GaN multilayers

Presentation: Oral at E-MRS Fall Meeting 2006, Symposium E, by Pierre Ruterana
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-15 08:26
Revised:   2009-06-07 00:44