Optoelectronic materials compatible with silicon substrates are important from the viewpoint of practical applications for silicon photonics. In this work, we have fabricated Zn₂SiO₄ nanoparticles embedded in SiO_x amorphous matrix showing a strong cathodoluminescent emission in the UV-blue region by adjusting the composition of Zn-Si-O film and post-annealing temperature. The Zn-Si-O films with various compositions of Zn/Si ratio=0.4~11.2 were sputter-deposited on Si (100) substrates by changing area ratio of ZnO to Si target and were post-annealed at the temperatures of 400~1000 °C for 3 minutes in a nitrogen atmosphere by rapid thermal annealing process. Among them, the film with Zn/Si ratio=~1.6, which was annealed at 700 ^oC, showed a strong and broad cathodoluminescence (CL) emission ranging from 350 to 550 nm. Especially, the UV-blue peak around ~400 nm was remarkable. Weaker UV-blue emission peak was also observed from the film with smaller Zn/Si ratio. However, this UV-blue emission peak disappeared as the Zn/Si ratio increased. The high-resolution TEM analysis showed that the films with Zn/Si ratio below ~1.6 contained Zn₂SiO₄ nanoparticles with a size of ~5 nm which were distributed in the SiO_x amorphous matrix. However, the Zn/Si ratio larger than the optimized value for the formation of Zn₂SiO₄ nanoparticle caused a formation of nanoparticle-network structure and further increase of Zn/Si ratio resulted in a formation of ZnO film structure. Therefore, the UV-blue emission peak around ~400 nm is thought to be attributed to Zn₂SiO₄ nanoparticles, which is supported by the fact that the intensity of this UV-blue emission peak increased with increasing the number of Zn₂SiO₄ nanoparticle. The origin of the strong and broad CL emission containing the UV-blue emission from the Zn-Si-O film with Zn/Si ratio=~1.6, leading to a possible application to Si-based optoelectronic devices, will be discussed analytically.

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