High resolution transmission electron microscopy (HR-TEM) and x-ray diffraction (XRD) measurements are done for the Se_xTe_100-x (x=16, 29, 38) thin films crystallized with rapid thermal annealing at 250 °C for 5 min. Composition of each sample is analyzed by Rutherford backscattering spectroscopy and the crystal structures of Se₁₆Te₈₄, Se₂₉Te₇₁ and Se₃₈Te₆₂ thin films are identified as a hexagonal structure of Te basis. Diffraction patterns for each composition are identical, meaning that the structure of the Se_xTe_100-x films does not change with different compositions. Also, there are no peaks addressed to a hexagonal Se structure. But the 2 theta value which is corresponded to the Te {0 1 1} peak increases with the increase of Se content. This means that the interplanar spacing between adjacant Te {0 1 1} planes becomes to be shorter with the Se content. The calculated spacing between Te {0 1 1} planes for Se₁₆Te₈₄ is 3.189 Å, that is 3.162 and 3.134 Å for Se₂₉Te₇₁ and Se₃₈Te₆₂, respectively. From the HR-TEM images of Se₁₆Te₈₄ and Se₃₈Te₆₂, it is found that the interplanar spacing between (0 1 -1) planes of Se₁₆Te₈₄ is longer than that of Se₃₈Te₆₂. This is well agreed with the calculated result from XRD. According to the models for the crystal structures consist of Se and Te basis based on the HR-TEM images and the simulated lattice images, it is indicated that the Se atom substitutes the Te atomic site in the Te hexagonal structure, leads to the variation of plane spacing. Because that the atomic size of Se is smaller than Te, it is plausible that the interplanar spacing between (0 1 -1) planes of Se₁₆Te₈₄ that has less content of Se atoms to substitute the Te atomic sites is longer than that of Se₃₈Te₆₂ in the same hexagonal structure.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/11446 must be provided.

1. Atomic layer deposition of W-C-N diffusion barrier and its thermal stability for Cu interconnects
2. Surface potential of conversible self assmebled monolayer
3. Fabrication of Metal Nano Dots Using Block Copolymer Thin Film
4. Structural evolution of germanium-bismuth-telluride phase change materials for PRAM application with modulated RF-sputtering power on bismuth target
5. Optical properties of Zn₂SiO₄ nanoparticles embedded in SiO_x amorphous matrix