RF-power modulated Ge-Bi-Te ternary chalcogenide thin film was deposited by co-sputtering Ge-Te and Bi target on SiO₂/Si substrate in order to search the appropriate candidate for alternate phase change material. A differential scanning calorymetry (DSC) analysis, x-ray diffraction (XRD) analysis, auger electron spectroscopy (AES), and high resolution transmission electron microscopy (HR-TEM) studies are conducted in order to investigate the crystallization behavior of Ge-Bi-Te ternary alloy. The XRD results of each annealed samples showed that Ge-Bi-Te alloy crystallized into GeBi₂Te₄, Ge₁Bi₄Te₇, Ge₂Bi₂Te₅ phase around 300 °C according to Ge content and expelled Ge single phase appeared over 400 °C. Not only GeBi₂Te₄, Ge₁Bi₄Te₇, Ge₂Bi₂Te₅ phases but Ge phase was also confirmed with HR-TEM images and diffraction patterns of various zone axes. It is noted that some of Ge₂Bi₂Te₅ grains show specific facetted planes like {0113}, {0112}, and {0001}. Through the successive analysis, we revealed the Ge-Bi-Te ternary alloy varies structure according to Ge contents and confirmed potential of Ge-Bi-Te alloy for the PRAM application.

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