Time
|
Duration
|
Type
|
Presenting person
|
Title
|
September 15th, Monday |
|
| 14:00 |
00:45:00 |
invited oral |
Oliver Ambacher |
AlGaN/GaN based optical and electrical sensors |
| 14:45 |
00:45:00 |
invited oral |
Alexander E. Belyaev |
Thermal effects and current instabilities in group III-Nitride-based devices |
| 15:50 |
00:45:00 |
invited oral |
Izabela Gorczyca |
Unusual properties of nitrogen containing III-V semiconductors; ab-initio calculations |
| 16:35 |
00:45:00 |
invited oral |
Pierre LEFEBVRE |
Optical properties of low-dimensional systems based on group-III nitride ternary and quaternary alloys. |
September 16th, Tuesday |
|
| 11:00 |
00:45:00 |
invited oral |
Matthew R. Phillips |
Cathodoluminescence properties of Zinc Oxide nano-particles |
| 11:45 |
00:45:00 |
invited oral |
Arturas Zukauskas |
Solid-state lighting |
| 14:00 |
00:45:00 |
invited oral |
Roman Stepniewski |
Electronic structure of shallow impurities in GaN studied via bound exciton magnetooptics |
| 14:45 |
00:45:00 |
invited oral |
V A. Kochelap |
Wide band-gap light emitters with improved hole injection |
| 15:50 |
00:20:00 |
oral |
Vasyl Glukhanyuk |
Studies of symmetry of erbium centers in GaN. |
| 16:10 |
00:20:00 |
oral |
Aleksandra Sokolowska |
Luminescent properties of wide bandgap materials at room temperature |
| 16:30 |
00:20:00 |
oral |
Saulius Jursenas |
Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy |
| 16:50 |
00:20:00 |
oral |
Karolis Kazlauskas |
Simulation of localized exciton hopping in quaternary AlInGaN |
September 17th, Wednesday |
|
| 11:00 |
00:45:00 |
invited oral |
Bernard Gil |
ZnO and its low dimensional systems |
| 11:45 |
00:45:00 |
invited oral |
Axel Dr Hoffmann |
ZnO - a promising semiconductor for application |
| 14:00 |
00:45:00 |
invited oral |
Luisa E. Bausa Lopez |
Optical performance of Yb^{3+} in LiNbO_3 laser crystals |
| 14:45 |
00:45:00 |
invited oral |
Andrzej J. Wojtowicz |
Wide bandgap materials for detection of ionizing radiation |
| 15:50 |
00:20:00 |
oral |
Cezariusz Jastrzebski |
Magnetotransport studies of Ga(Mn,Fe)N bulk crystals |
| 16:10 |
00:20:00 |
oral |
Barbara Chwalisz |
Optical Detection of 2DEG in GaN/AlGaN Structures - High Magnetic Field Studies |
| 16:30 |
00:20:00 |
oral |
Hoi Wai Choi |
Sub-micron InGaN Ring Structures for High-efficiency LEDs |
September 18th, Thursday |
|
| 09:00 |
00:45:00 |
invited oral |
Luis Arizmendi |
Photonic applications of lithium niobate |
| 09:45 |
00:45:00 |
invited oral |
Katalin Polgar |
Phase relations in the growth of stoichiometric LiNbO_3 |
| 11:00 |
00:45:00 |
invited oral |
Zbigniew R. Zytkiewicz |
Novel substrates for heteroepitaxy by lateral overgrowth technology |
| 11:45 |
00:45:00 |
invited oral |
Przemyslaw Deren |
Lasers and medicine |
| 14:00 |
00:45:00 |
invited oral |
Peder Bergman |
SiC - Present Status and Material Challanges |
| 14:45 |
00:45:00 |
invited oral |
Kevin Homewood |
Applications of dislocation loop engineering to silicon |
| 15:50 |
00:20:00 |
oral |
Romuald BRAZIS |
Phonon band population inversion in GaN |
| 16:10 |
00:20:00 |
oral |
Elena M. Shishonok |
Novelties about cubic boron nitride luminescence properties |
| 16:30 |
00:20:00 |
oral |
Grzegorz P. Karwasz |
Defects dynamics in P+ implanted 6H-SiC, studied by AFM and positron annihilation |
| 16:50 |
00:20:00 |
oral |
Andriy Goryachko |
XPS and AFM investigations of buffer layer between Si(100) and 3C-SiC, created by interaction with C_2H_2 |
| 17:10 |
00:20:00 |
oral |
Herbert Willi Kunert |
Multi-Phonon process in C6v4 (P63mc) hexagonal semiconductors: GaN, ZnO, 2H - SiC, 6H - SiC, ZnS, CdS |
| 17:30 |
00:20:00 |
oral |
Gennaro Conte |
Temporal response of CVD diamond detectors to modulated low energy x-ray beams |
September 19th, Friday |
|
| 09:00 |
00:45:00 |
invited oral |
Lauri Niinisto |
Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics |
| 09:45 |
00:45:00 |
invited oral |
Markku Leskela |
Atomic Layer Deposition of Oxide Dielectric Films for Microelectronics |
| 11:00 |
00:20:00 |
oral |
Jamie Soon |
An Atomistic view of the oxidation mechanism of silicon clusters on (0001) SiC 3x3 reconstructed surface |
| 11:20 |
00:20:00 |
oral |
Armen R. Poghosyan |
Mechanisms of optical control of domain structures in ferroelectrics |
| 11:40 |
00:20:00 |
oral |
Agata Kamińska |
Cr^3^+ IONS IN HYDROGENATED AND PROTON EXCHANGED LiNbO_3 CRYSTALS |
| 12:00 |
00:20:00 |
oral |
Malgorzata Sznajder |
Elementary energy bands in band structure calculations of some wide bandgap crystals |
| 12:20 |
00:20:00 |
oral |
Anatoli A. Evtukh |
Field Emission from Si nanoclusters embedded into insulating SiO_2 films |
| 12:40 |
00:20:00 |
oral |
Igor Lisovskyy |
Properties of ultrathin SiO2 films grown on hydrogenated silicon |
