Magnetotransport studies of Ga(Mn,Fe)N bulk crystals

C. Jastrzebski 2Wojtek Gebicki 2Michal Bockowski 1B. Strojek 3T. Szyszko 3Sławomir Podsiadło 3

1. Polish Academy of Sciences, High Pressure Research Center (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
2. Warsaw University of Technology, Faculty of Physics, Koszykowa 75, Warszawa 00-662, Poland
3. Warsaw University of Technology, Faculty of Chemistry, Noakowskiego 3, Warszawa 00-664, Poland


GaN based DMS are considered the very promising wide band gap materials for spintronic applications. Electric properties (carrier concentration, mobility) of the materials are crucial for understanding the nature of magnetism in these materials and in consequence for use in possible applications. It seems undoubtedly that electric and magnetic properties of the materials are tightly coupled.
In our work we studied two types of samples GaMnN and GaFeN. The Mn doped samples were grown by high pressure method and chemical transport method and GaFeN samples were grown only by chemical transport method. Some of the GaN:Fe samples were co doped with Si atoms.
Van der Pauw resistance measurements and Hall resistance measurements were applied for the first samples and five contacts bar type method for the second ones. Measurements were performed in the range of temperature from 4.2 to 250K and at magnetic field up to 7 T. We obtained positive magnetoresistance for GaMnN but some GaFeN samples (especially the ones doped with Si atoms) indicates negative magnetoresistance.
Carrier concentration was extracted from the linear slope of the Hall resistance versus magnetic field. Electrons concentration of about 10e19 cm-3 was determined for GaMnN samples and it didn't depend from growth method but for GaFeN samples concentration exceeded 10e21 cm-3 indicating metallic type of the samples. At low temperature deviation from linearity of Hall resistance versus magnetic field was observed for small values of B and will be further discussed.
Magnetic properties of the same GaFeN samples were studied elsewhere and the magnetic measurements show coexistence of para- and ferromagnetic phases in the same sample. The effect was also visible in GaMnN samples but the ferromagnetic phase was significant weaker in this case.
Temperature dependence of resistance and Hall resistance of the samples was measured and will be discussed.
Partially supported by KBN grant PBZ-KBN-044/P03/2001.


Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds
  2. Preparation of free-standing GaN substrates from thick GaN layers crystallized by Hydride Vapor Phase Epitaxy on ammonothermally grown GaN seeds
  3. Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds
  4. Role and influence of impurities on GaN crystal grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration
  5. Synthesis of gallium nitride nanowires by Sublimation Sandwich Method
  6. Synthesis of aluminum nitride nanopowder; compare methods for determination of the grain size in nanopowders 
  7. Resonance Raman scattering and lattice dynamics of GaMnN crystals
  8. Lattice dynamics and Raman spectroscopy of ZnO:Mn crystals
  9. Light polarized resonant Raman spectra from individual carbon nanotubes
  10. Microscopy and spectroscopy techniques in characterization of thick GaN and Ga1-xMnxN layers grown by Sublimation Sandwich Method
  11. Single crystals of gallium nitride doped with gadolinium- synthesis and properties.
  12. Self-organized microstructure of TiO2-MnO
  13. Structural characterization of GaN and Ga1-xMnxN layers obtained by Sandwich Sublimation Method
  14. Rietveld refinement for polycrystalline indium nitride
  16. Growth and characterization of GaN and GaMnN layers obtained by Sublimation Sandwich Method
  17. Close-Spaced Crystal Growth and Characterization of BP Crystals
  18. GaN growth by Sublimation Sandwich Method
  19. Diffusion and diffusion induced defects in GaN
  20. Studies of multiwall carbon nanotubes using Raman spectroscopy and AFM
  21. X-Ray Study of Lattice Parameters of GaN in a Broad Temperature Range

Presentation: oral at E-MRS Fall Meeting 2003, Symposium A, by Cezariusz Jastrzebski
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-27 23:06
Revised:   2009-06-08 12:55