Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics

Lauri Niinisto ,  Minna Nieminen ,  Jaakko Niinistö ,  Matti Putkonen ,  Jani Päiväsaari 

Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, FIN-02015 Espoo, Helsinki, Finland

Abstract

Atomic layer deposition (ALD) was originally developed in the 1970s to process wide band-gap semiconducting II-VI sulfides as well as insulating oxides for thin film electroluminescent (TFEL) displays. ALD is now a mature technique which has found other applications as well, e.g. in producing catalysts and sensors. Currently, ALD is experiencing a breakthrough as a method-of-choice in the semiconductor industry where so-called high-k insulating oxides can be processed by ALD as very thin overlayers with precise thickness control.

The dielectric constants for conventional dielectrics such as SiO2, silicon nitride and alumina are 3.9, 7, and 9, respectively, but much higher k-values (in the range of 15 to 30) can be obtained with the oxides of Y, La, Hf and Zr. We have recently demonstrated that all these high-k oxides can be processed in a surface-controlled ALD mode exploiting various precursor approaches each having its own advantages. Thus, for instance, completely oxidized and high density films can be obtained by the use of ozone, while low processing temperatures and high growth rates are characteristic for the use of true organometallics, viz. cyclopentadienyl compounds.

When choosing the precursor chemistry, the impurities of the films and reactions at the silicon interface need also to be considered requiring advanced analytical characterization by XPS, TOF-ERDA, X-TEM and other surface-sensitive and high-resolution techniques. Finally, electrical measurements are used to evaluate the dielectric properties.

Legal notice
  • Legal notice:

    Copyrighted materials, (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced, stored in or introduced into a retrieval or caching system, or transmitted in any form or by any means (electronic, mechanical, photocopying, recording or otherwise), or for any purpose, without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/735 must be provided.

 

Related papers
  1. ALD of ZrO2 Thin Films Exploiting Novel Mixed Alkylamido-Cyclopentadienyl Precursors
  2. Atomic layer deposition as a tool for tailoring adhesion properties of interfaces.
  3. Low temperature ZnMnO by ALD
  4. ZnMnO Films grown by Atomic Layer Deposition with uniform Mn distribution

Presentation: invited oral at E-MRS Fall Meeting 2003, Symposium A, by Lauri Niinisto
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-14 17:35
Revised:   2009-06-08 12:55
Google
 
Web science24.com
© 1998-2021 pielaszek research, all rights reserved Powered by the Conference Engine