Efficient electron field emission from silicon flat cathode coated with SiOx film (x=0.3-0.5) was observed both before and after thermal (1000C) annealing with subsequent etching in HF solution. Oxide films were produced by silicon thermal evaporation in vacuum (10-5Torr.). Using optical spectroscopy in visible light and in infrared ranges, and AFM technique the structural features of these films were investigated. It was shown, that initial SiOx film may be represented as SiOx(Si) composite (x=1.3). Thermal annealing causes further phase segregation in the film material and it is transformed into SiO2(Si) composite. During such a process silicon grains size decreases and their density increases. The model of electron field emission from the surface of such films was proposed. It was supposed that limitation process of the current flow under high electric fields is connected with Fowler-Nordheim tunneling through barriers Si-SiOx+vacuum or Si-vacuum. Current peaks on emission I-V characteristics were explained in the framework of resonance tunneling mechanism.
Investigated structures seems to be perspective for application as flat field cathodes in vacuum electronic devices and in flat-paneling field emission displays.

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