Electronic structure of shallow impurities in GaN studied via bound exciton magnetooptics
|Roman Stepniewski 1,2, Andrzej Wysmolek 2, Marek Potemski 1|
1. Grenoble High Magnetic Field Laboratory, MPI/FKF-CNRS (GHMFL), 25, Avenue des Martyrs, Grenoble 38-042, France
There is a rekindled interest in wide gap compounds of which Gallium Nitride is a relevant example. The need for precise control of doping, which is essential for appropriate device design, continues to stimulate the basic studies of impurity centres in this semiconductor. A detailed knowledge of their electronic structure (energy and symmetry of the ground and excited states) allows probing their location in the lattice and assigning the specific properties with their chemical identification.
Presentation: invited oral at E-MRS Fall Meeting 2003, Symposium A, by Roman Stepniewski
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-14 17:44 Revised: 2009-06-08 12:55
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