Luminescent properties of wide bandgap materials at room temperature

Aleksandra Sokolowska 3,  Aleksander Werbowy 4,  Adam Barcz 2,  Marek Godlewski 2,5,  Jan Szmidt 4,  A. Olszyna 1

1. Warsaw University of Technology, Faculty of Materials Science and Engineering (InMat), Wołoska 141, Warszawa 02-507, Poland
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. Technical University of Łódź, Institute of Materials Engineering, Stefanowskiego 1/15, Łódź 90-924, Poland
4. Warsaw University of Technology, Institute of Microelectronics & Optoelectronics (imio), Koszykowa 75, Warszawa 00-662, Poland
5. Cardinal Stefan Wyszynski University, College of Science, Warszawa, Poland

Abstract

Investigated nanocrystalline (grain size < 100 nm) submicron thick GaN, AlN and BN layers were produced on Si substrates by means of reactive crystallization from impulse plasma (RPP CVD method), while diamond-like carbon (DLC) films were obtained in the course of radio frequency (13.56 MHz) chemical vapor deposition (RF CVD) process. In our previous works (e.g. [1-3]) we presented results of the studies of their optical (refractive index value, absorption edge value), electronic (resistivity, dielectric constant, state of the substrate/layer interface) as well as low-temperature photoluminescent properties [4]. Attempts of correlating structural, optical and electronic properties of discussed films with their photoluminescent characteristics were also undertaken.
In the present study we investigated photoluminescence (PL) of the layers excited by He-Cd laser (325 nm) beam at the room temperature. All materials, except BN, demonstrated PL in UV and violet light (fairly homogenous in plane in the case of GaN and AlN). Relatively the most intensive emission was observed for DLC and AlN films. Moreover, the subject of investigations was also cathodoluminescence (CL) of GaN and AlN layers. Both showed very broad-band emission, fairly homogenous in plane. An attempt of correlating luminescent properties of studied materials at room temperature with their bandgap widths and nanocrystallinity is presented as well.


References

[1] A.Werbowy, J.Szmidt, A.Sokolowska, A.Olszyna, Diamond Relat. Mater., 9(1998)609.
[2] A.Werbowy, J.Szmidt, A.Sokolowska, Ceramics: Getting into the 2000s - Part E, P.Vincenzini (ed.), Faenza, 1999, p.85.
[3] A.Werbowy, P.Firek, J.Szmidt, A.Olszyna, M.Galazka, J. Wide Bandgap Mater., 9(2002)169.
[4] J.Siwiec, A.Sokolowska, A.Olszyna, R.Dwilinski, M.Kaminska, J.Konwerska-Hrabowska, NanoStructured Mater., 10(1998)625.

Legal notice
  • Legal notice:

    Copyrighted materials, (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced, stored in or introduced into a retrieval or caching system, or transmitted in any form or by any means (electronic, mechanical, photocopying, recording or otherwise), or for any purpose, without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/751 must be provided.

 

Related papers
  1. Nanoparticles for medical imaging 
  2. The effect of annealing on properties of Europium doped ZnO nanopowders obtained by a microwave hydrothermal method
  3. Microwave conductivity of ZnO:Co and ZnO:Cu thin films with nano-size metallic Co/Cu inclusions.
  4. Tb3+ ion luminescence enhancement in yttria host lattice obtained via microwave hydrothermal process
  5. Quantum semiconductor nanostructures for applications in biology and medicine -development and commercialisation of new generation devices for molecular diagnostics on the basis of new Polish semiconductor devices
  6. Laser decoration an marking of ceramic and glass products
  7. The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates
  8. Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
  9. Hydrothermal growth of ZnO nanorods for solar cells applications
  10. Epitaxial growth and characterization of zinc oxide nanorods obtained by the hydro-thermal method
  11. Growth of zinc oxide and dielectric films using Atomic Layer Deposition method from organic precursors
  12. Rezonansowe badania fotoemisyjne ferromagnetycznych warstw ZnCoO
  13. Resonant photoemission study of Sm atoms on ZnO surface
  14. Mangan w warstwach ZnMnO hodowanych metodą osadzania warstw atomowych
  15. Lokalne otoczenie atomów kobaltu w cienkich warstwach ZnCoO
  16. Contactless electroreflectance of ZnSe layers grown by atomic layer epitaxy
  17. Electrical and optical properties of zinc oxide layers obtained by Atomic Layer Deposition
  18. Zinc oxide grown by Atomic Layer Deposition - a material for novel 3D electronics
  19. Dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by Atomic Layer Deposition
  20. Thin films of ZnS and ZnSe by Atomic Layer Deposition for light sensor applications
  21. Photovoltaic cells based on nickel phthalocyanine and zinc oxide formed by atomic layer deposition
  22. Effects related to deposition temperature of ZnCoO films grown by Atomic Layer Deposition – uniformity of Co distribution, structural, electric and magnetic properties
  23. Effect of annealing on the structure and microstructure of Pr doped ZrO2-Y2O3 nanocrystals
  24. Measurements of strain in ceramic components using magnetostrictive delay line
  25. Synthesis of doped ZnO nanopowders in microwave hydrothermal reactors
  26. Synthesis of Al doped ZnO nanopowders and their enhanced luminescence
  27. How we can stimulate intra-shell emissions of rare earth and transition metal ions in thin films and in nanoparticles
  28. Structure of Si:Mn annealed under enhanced stress conditions
  29. ZnO thin films for organic/inorganic heterojunctions
  30. Combining microwave and pressure techniques for hydrothermal synthesis of ZnO and ZrO2 nanopowders doped with a range of metal ions
  31. Luminescence properties of zinc oxide nanopowders doped with Al ions obtained by the hydrothermal and vapour condensation methods.
  32. Nanostructured Carbon Electrodes For Oxygen Reduction Catalyzed By Laccase Without any Mediators
  33. Reconstruction of lattice structure of ion-implanted near-surface regions of HgCdTe epitaxial layers
  34. Effect of high pressure annealing on defect structure of GaMnAs
  35. Wide band-gap II-VI semiconductors for optoelectronic applications
  36. Low temperature ZnMnO by ALD
  37. ZnMnO Films grown by Atomic Layer Deposition with uniform Mn distribution
  38. Effect of annealing on electrical properties of low temperature ZnO films
  39. Effect of stress on structural transformations in GaMnAs
  40. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  41. Structure and Magnetization of Defect-Associated Sites in Silicon
  42. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  43. Doping of ZnO nanopowders with Mn, Ni and Cr In an ultrasound and microwave driver hydrothermal reaction
  44. The role of radiation defects in HgCdTe epitaxial growth
  45. Time-resolved ODMR investigations of II-VI based DMS heterostructures
  46. Method of Manganese co-doping of LT ZnO films
  47. Photoluminescence of ZnO films studied by femptosecond sapphire:Ti laser
  48. Optical properties of p-type ZnO:(N, As, Sb)
  49. Two color spectroscopy of ZnSe:Cr
  50. Photo-EPR studies of charge tunneling processes in CdxZn(1-x)Se:Fe,Cr (0 ≤ x ≤ 0.3) crystals
  51. Luminescence of CdMnTe Crystals in Magnetic Field
  52. Luminescence of doped nanoparticles of wide band gap II-VI compounds
  53. Doping of ZnO nanopowders with Mn and Cr in an ultrasound and microwave driven hydrothermal reaction
  54. Diffusion of Mn in gallium arsenide.
  55. ELECTRICAL AND OPTICAL PROPERTIES OF ZnO AND ZnO:Cr CRYSTALS, GROWN BY CVT METHOD
  56. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  57. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
  58. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
  59. p-type conducting ZnO: fabrication and characterisation
  60. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
  61. Dynamics of spin interactions in II-Mn-VI semiconductors studied with time-resolved optically detected magnetic resonance
  62. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
  63. Fe photoionization transition in ZnSSe:Fe crystals - photo-ESR studies
  64. Study of Long-Term Stability of Ohmic Contacts to GaN
  65. In-depth and in-plane profiling of InGaN-based laser diodes and heterostructures
  66. Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures
  67. Compensation mechanisms in magnesium doped GaN
  68. Optical and magnetic resonance investigations of ZnO crystals doped with transition metal ions
  69. Optical and ODMR study of GaN-based HEMT structures
  70. Photo-ESR and optical studies of Cr photoionization transition in CdZnSe:Cr crystals

Presentation: oral at E-MRS Fall Meeting 2003, Symposium A, by Aleksandra Sokolowska
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-15 18:50
Revised:   2009-06-08 12:55
Google
 
Web science24.com
© 1998-2021 pielaszek research, all rights reserved Powered by the Conference Engine