We have measured the electroluminescence from LEDs and laser diodes fabricated on top of various types of substrates like sapphire, HVPE-GaN, high pressure grown GaN. These structures were characterized by the density of dislocations ranging from 10⁹cm^-2down to 10⁵cm^-2. In all cases the similar efficiency droop was observed. We also studied the structures with the different emission wavelength (between 410 and 440 nm). All these structures showed similar “droop”. Finally, we investigated the droop effect in nitride laser diodes. We observed a strong competition between the stimulated emission and the nonradiative droop-mechanism. In some cases, the shortening of the recombination time in laser diodes below the lasing threshold caused by the stimulated recombination may somehow suppress the Auger-like nonradiative recombination.

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