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Nitrides lasers after BluRay
Polish Academy of Sciences, Institute of High Pressure Physics (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
The GaN-based BluRay laser diodes emitting light at 405 nm and powers up to 100 mW are manufactured in large quantities and for down-going prices. The presentation will deal with prospects of manufacturing new-generation laser diodes of higher powers, wide spectral range (UV- green), and reliability.
In the first part, I will discuss the most important issues related to the GaN substrate preparation: its size, orientation, misorientation, doping level. I will compare the properties of substrates available from other vendors with those of Unipress/TopGaN crystals.
In the second part, I will focus on the growth modes of InGaN layers (quantum wells) which are active parts of the light emitters. New results, as influence of the substrate misorientation on indium incorporation, and influence of growth parameters on the layer morphology, will be shown.
Then, such problems as layer cracking, creation of defects, sample bowing, all related to AlGaN/GaN lattice mismatch will be discussed. A new method of fabricating non-planar, laterally patterned laser diode structures will be proposed.
In the final part, the main limitations of introducing new devices, as droop phenomenon, low-growth temperature of green emitters, built-in electric fields, will be discussed and ways of overcoming those problems will be proposed
Presentation: Invited oral at E-MRS Fall Meeting 2009, Symposium C, by Mike Leszczynski
See On-line Journal of E-MRS Fall Meeting 2009
Submitted: 2009-05-25 15:14 Revised: 2009-06-07 00:48