Nitrides lasers after BluRay

Mike Leszczynski 

Polish Academy of Sciences, Institute of High Pressure Physics (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
TopGaN Sp. z o. o., Sokolowska 29/37, Warsaw 01-142, Poland

Abstract

The GaN-based BluRay laser diodes emitting light at 405 nm and powers up to 100 mW are manufactured in large quantities and for down-going prices. The presentation will deal with prospects of manufacturing  new-generation laser diodes of higher powers, wide spectral range (UV- green), and reliability.

In the first part, I will discuss the most important issues related to the GaN substrate preparation: its size, orientation, misorientation, doping level. I will compare the properties of substrates available from other vendors with those of Unipress/TopGaN crystals.

In the second part, I will focus on the growth modes of InGaN layers (quantum wells) which are active parts of the light emitters. New results, as influence of the substrate misorientation on indium incorporation, and influence of growth parameters on the layer morphology, will be shown. 

Then, such problems as layer cracking, creation of defects, sample bowing, all related to AlGaN/GaN lattice mismatch will be discussed. A new method of fabricating non-planar, laterally patterned laser diode structures will be proposed.

In the final part, the main limitations of introducing new devices, as droop phenomenon, low-growth temperature of green emitters, built-in electric fields, will be discussed and ways of overcoming those problems will be proposed  

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/19228 must be provided.

 

Related papers
  1. GaN substrates with variable surface miscut for laser diode applications
  2. Multicolor laser diode arrays for medical applications
  3. Efficiency „droop” in nitride light emitters
  4. Surface morphology of InGaN layers
  5. Inhomogeneities of InGaN/GaN MOVPE multi quantum wells grown with two temperatures process studied by transmission electron microscopy.
  6. Polymer film-coated high electron mobility transistors, based on GaN heterostructures, as sensors for some benzene derivatives
  7. Blue laser diodes manufacturing in Poland
  8. X-ray Diffraction as a Tool of InGaN layer Characterization.
  9. Rietveld refinement for polycrystalline indium nitride
  10. PLASTIC PROPERTIES OF GaN AND Al2O3 CRYSTAL: FEM-SIMULATION OF NANOINDENTATION CONFIRMED BY HIGH-RESOLUTION MICROSCOPY
  11. Microstructure of homoepitaxially grown InGaN/GaN, violet light emitting laser diodes.
  12. Built-in electric fields in group III-nitride light emitting quantum structures
  13. Bowing of epitaxial structures grown on bulk GaN substrates
  14. The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy

Presentation: Invited oral at E-MRS Fall Meeting 2009, Symposium C, by Mike Leszczynski
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-25 15:14
Revised:   2009-06-07 00:48
Google
 
Web science24.com
© 1998-2021 pielaszek research, all rights reserved Powered by the Conference Engine