Indium segregation in Al1-xInxN investigated by photoluminescence under hydrostatic pressure

Agata Kamińska 1Grzegorz Staszczak 2Izabela Gorczyca 2Andrzej Suchocki 1Tadeusz Suski 2David P. Schenk 3

1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
2. Polish Academy of Sciences, Institute of High Pressure Physics (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
3. CRHEA-CNRS, Park de Sopia Antipolis, Valbonne 06560, France


The progress in the growth of Al1-xInxN layers has enabled detailed investigation of this material, which is of considerable interest because its band gap Eg covers a very wide spectral range, from the infrared (InN with Eg = 0.7 eV) to the ultraviolet (AlN with Eg = 6.2 eV). 

Introducing In to GaN or to AlN improves efficiency of light emission from these materials. Segregation of In seems to play a crucial role in this improvement. Photoluminescence and absorption measurements of Al1-xInxN revealed surprisingly large bowing in the Eg vs. x [1]. Recently I. Gorczyca et al. have performed theoretical calculations of the electronic band structure of Al1-xInxN alloys and their pressure dependence [2]. The calculated band gaps and their pressure coefficients dEg/dp show a decrease for increasing x with especially pronounced bowing of dEg/dp. Moreover, taking into account effect of In segregation causes a decrease in Eg, reduction of dEg/dp and an increase of bowing with respect to In distributed uniformly. Predicted pressure coefficients of Eg for Al1-xInxN with x = 0.25 change drastically from 35 meV/GPa to 15 meV/GPa for uniform and entirely segregated cases, respectively.

In this work we compare these predictions with our experimental results. We analyze the pressure behaviour of light emission for series of Al1-xInxN layers. The measured values of PL peak pressure coefficient are shown to decrease with increasing indium content in accordance with theoretical predictions and are situated between theoretical values calculated for uniform and entirely In-segregated cases. This likely reflects the role of different growth conditions in modifying a rate of In-segregation in Al1-xInxN layers. These results can be useful in understanding and controlling the influence of growth conditions on basic properties of these materials.


[1] K. Wang et al., J. Appl. Phys. 103, 073510 (2008);

[2] I. Gorczyca et al., Phys. Stat. Sol. (c) (2009), DOI 10.1002/pssc.200880890.

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. Efficiency „droop” in nitride light emitters
  2. Surface morphology of InGaN layers
  3. In-segregation induced anomalous behavior of band gap and its pressure coefficient in InAlN and InGaN. Theory and Experiment
  4. Pressure dependence of lattice parameter of Gadolinium Gallium Garnet crystals
  5. Polymer film-coated high electron mobility transistors, based on GaN heterostructures, as sensors for some benzene derivatives
  6. Carrier recombination under one-photon and two-photon excitation in GaN epilayers
  7. Localized donor states resonant with the conduction band in InN and GaN
  8. Microstructure of homoepitaxially grown InGaN/GaN, violet light emitting laser diodes.
  9. Modeling of elastic, piezoelectric and optical properties of vertically correlated GaN/AlN quantum dots
  10. Built-in electric fields in group III-nitride light emitting quantum structures
  12. Surprisingly low built-in electric fields in quaternary InAlGaN heterostructures
  13. Unusual properties of nitrogen containing III-V semiconductors; ab-initio calculations

Presentation: Oral at E-MRS Fall Meeting 2009, Symposium C, by Agata Kamińska
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-08 14:41
Revised:   2009-06-16 10:17
© 1998-2021 pielaszek research, all rights reserved Powered by the Conference Engine