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Photoemission studies of very thin (<10nm) silicon oxynitride (SiOxNy) layers formed by PECVD

Patrick Hoffmann 1Romuald Beck 2M. Cuch 2M. Giedz 2A. Jakubowski 2Dieter Schmeisser 1

1. Brandenburg Technical University, Department of Applied Physics/Sensorics (BTU), Erich Weinert Str. 1, Cottbus 03044, Germany
2. Warsaw University of Technology, Institute of Microelectronics & Optoelectronics (imio), Koszykowa 75, Warszawa 00-662, Poland


The "ITRS Roadmap" suggests the necessity of working out the processing methods allowing formation of ultrathin dielectric layers with higher than for silicon dioxide dielectric permittivity value. The silicon oxynitride layers (SiOxNy) seem to be the most natural compromise. But still none of high temperature methods used for its formation can be seriously considered as final solution for future ULSI-CMOS ICs production due to the inevitable formation of nitride monolayers just at the silicon-insulator interface. The main scope of this investigation is to check if this is true.
The oxynitride layers were produced by PECVD method. The process has already been optimised in order to allow repeatable and reliable formation of ultrathin layers (<10 nm). These layers were investigated by photoelectron spectroscopy (PES) using variable excitation energy. This results in a variable escape depth of the photoelectrons from were the depth structure of the sample can be concluded. Due to the combination of chemical information and depth information this method is a unique tool for investigating the hidden nitride layers. In this work we present a comparing study of oxynitride layers with different oxygen-to-nitrogen ratios and different post-deposition annealing temperatures investigated by the above described method.


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Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Patrick Hoffmann
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-26 19:17
Revised:   2009-06-08 12:55