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Photoemission studies of very thin (<10nm) silicon oxynitride (SiOxNy) layers formed by PECVD
|Patrick Hoffmann 1, Romuald Beck 2, M. Cuch 2, M. Giedz 2, A. Jakubowski 2, Dieter Schmeisser 1|
1. Brandenburg Technical University, Department of Applied Physics/Sensorics (BTU), Erich Weinert Str. 1, Cottbus 03044, Germany
The "ITRS Roadmap" suggests the necessity of working out the processing methods allowing formation of ultrathin dielectric layers with higher than for silicon dioxide dielectric permittivity value. The silicon oxynitride layers (SiOxNy) seem to be the most natural compromise. But still none of high temperature methods used for its formation can be seriously considered as final solution for future ULSI-CMOS ICs production due to the inevitable formation of nitride monolayers just at the silicon-insulator interface. The main scope of this investigation is to check if this is true.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Patrick Hoffmann
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-26 19:17 Revised: 2009-06-08 12:55