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Growth of CdS - PbS nanotructured double films on silicon substrate by SILAR techniques

Judita Puišo 1,  Seppo Lindroos 2,  Sigitas Tamulevicius 1,  Markku Leskela 2,  Ginutis Balcaitis 3,  Asta Guobiene 1

1. Kaunas University of Technology, Department of Physics, Studentu 56, Kaunas LT-3031, Lithuania
2. Department of Chemistry, University of Helsinki, A. I. Virtasen aukio 1, Helsinki FIN-00014, Finland
3. Kaunas University of Technology, Institute of Physical Electronics (KTU FEI), Savanoriu 271, Kaunas LT-3009, Lithuania

Abstract

The successive ionic layer adsorption and reaction (SILAR) technique was used to deposit CdS and PbS nanotructured films. PbS thin films were grown from diluted solutions 0,4 M Pb(CH3COO)2, 0,2 M Pb(CH3COO)2 + 0,2 M C6H15NO3 (triethanolamine), 0,4 M Pb(NO3)2 as lead and 0.4 M CH3CSNH2 (thioacetamide) as sulfur precursors. CdS nanostructured films were grown from 0,1 M CdCl2 as cadmium and 0,05 M Na2S as sulfur precursors. Ionic layer by ionic layer process took place at room temperature and normal pressure. XRD, AFM and SEM and XPS characterized the growth of CdS - PbS multilayers on Si. Especially the effect of the different PbS buffer layer to the growth of CdS was studied. The PbS films were polycrystaline and cubic and CdS films were polycrystalline and hexagonal. The best crystallinity of the double layer films was achieved when lead nitrate was used as precursor. According to SEM and AFM the films were smooth.

 

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Presentation: poster at E-MRS Fall Meeting 2003, Symposium F, by Judita Puišo
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-07 11:45
Revised:   2009-06-08 12:55