Diamond like carbon (DLC) films received considerable interest due to the outstanding mechanical, optical and electrical properties. The properties of the DLC films can be controlled by doping with both metallic and non-metallic elements and compounds. In such a way problems of the adhesion with ferrous substrates, high internal stress and thermal stability can be solved. Particularly SiO_x doping of the hydrogenated DLC films results in reduction of the internal stress, friction coefficient, dielectric permittivity, considerably better adhesion with ferrous substrates such as iron. Increase of the fracture toughness, deposition rate, optical transmittance, hydrophobicity and higher thermal stability were reported for SiO_x doped DLC films as well. Such combination of the properties is particularly interesting for possible microelectronic applications of the DLC such as anti-sticking layers in novel lithographic techniques such as nanoimprint lithography as well as room temperature deposition of dielectric films.

In this research silicon oxide doped hydrogenated amorphous carbon films have been synthesized by direct ion beam deposition. Effects of the deposition process conditions such as composition of the gas precursors, ion current density and ion energy were studied. Structure of the films was investigated by means of the Raman and FTIR spectrometry as well as X-ray photoelectron spectroscopy (XPS). Hydrophobic properties of the SiO_x doped DLC layers were evaluated by measuring contact angle with water. Dielectric properties of the synthesized diamond like carbon films such as breakdown voltage as well as dielectric permittivity were studied.

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