THE INFLUENCE OF Si PRETREATMENT ON THE GROWTH OF PbS THIN FILMS IN
THE SILAR TECHNIQUE
J. Puiso, Department of Physics, Kaunas University of Technology,
Studentu 50, LT-3031 Kaunas, Lithuania, S. Lindroos, Department of
Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki,
Finland, S. Tamulevicius, Institute of Physical Electronics, Kaunas
University of Technology, Savanoriu 271, LT-3009 Kaunas, Lithuania, M.
Leskelä, Department of Chemistry, University of Helsinki, P.O. Box 55,
FIN-00014 Helsinki, Finland, V. Snitka, Scientific Center
"Microsystems and Nanotechnologies", Kaunas University of Technology,
Studentu 56, LT-3031 Kaunas, Lithuania
Lead sulfide, PbS, is a narrow band gap semiconductor and it has
been used in infrared detectors and in photothermal and solar control
devices.
The successive ionic layer adsorption and reaction (SILAR) technique
used to deposit PbS, involves growth of thin films from diluted
solutions (0.2M Pb(CH[3]OO)[2 ] as lead and 0.4 M CH[3]CSNH[2]
(Thioacetamide) as sulfur precursors) ionic layer by ionic layer at
room temperature and normal pressure. The growth of PbS thin film on
Si was characterized by XRD, AFM and SEM. Specially the effect of the
Si substrate pretreatment (by conc. H[2]SO[4] +H[2]O[2 ]"piranha" or
by HF) has been studied. After HF pretreatment the PbS film growth was
more clearly 3D mode compared with piranha treatment.

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