STRUCTURAL CHANGES OF TiO[2 ]THIN FILMS WITH REACTIVE ANNEALING,
V. Snitka, Research Centre for Microsystems and Nanotechnology,
Studentu 65 str., LT 3031; Kaunas, Lithuania. T. Norby, Department of
Chemistry, University of Oslo, Centre for Materials Science,
Gaustadalleen 21, NO-0349 Oslo, Norway. D. Milcius, Lithuanian Energy
Institute, 16 laboratory, LT 3035 Kaunas, Lithuania. A. Baltusnikas
Lithuanian Energy Institute, 16 laboratory, LT 3035 Kaunas, Lithuania.
TiO[2] thin films were prepared by DC magnetron sputtering method
using Ar and O[2] as working gases. The samples were deposited on
quartz substrates. The stoichiometric TiO[2] thin films with anatase
phase were obtained by optimizing the sputtering parameters such as
gas Ar:O[2] ratio, sputtering gas pressure and sputtering power. The
thickness of TiO[2] thin films was 1 mm and they were annealed in the
range of 300 - 900 0C. Phase and surface morphology were investigated
using X-ray diffraction (XRD) and atomic force microscopy (AFM).
Surface elastic properties were investigated using force modulation
mode in atomic force microscopy. The thin films structure,
crystallinity, surface morphology and elastic properties were changed
with increasing annealing temperature.

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