For preparation good performance sensor it is necessary to prepare high-quality Pd/InP interface with high Schottky barrier. In this sense it is not convenient to prepare this interface by high energetic means of metal deposition because it leads to Schottky barrier decrease induced by Fermi level pinning explained by disorder-induced gap states (DIGS). Our effort is to develop reproducible method for preparation such interfaces with the highest Schottky barrier possible.

For the deposition we used electrophoretic deposition method which put Pd nanoparticles from colloid solution on the InP wafer. This process occurs in a presence of electromagnetic field, which accelerate Pd nanoparticles in the direction to the wafer.

We prepared several interfaces by this method. These structures were analyzed by current-voltage measurements, capacitance-voltage measurements, impedance measurements, AFM, and secondary mass spectroscopy. This measurements show the good rectifying character of this structure and the Schottky barrier high calculated from I-V curves was about 1eV. We also tried to improve properties of this interface by annealing which had positive impact on Schottky barrier high.

This talk is to refer about the progress in the project of central goal to find reproducible method for fabrication Pd/InP interfaces with high-quality properties.

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