Metal-semiconductor interfaces formed by thermal evaporation on n-type II-VI and III-V semiconductors frequently show low Schottky barrier heights (SBH). Attempts to increase the SBH by depositing metals with a large work function fail because of the strong Fermi level pinning (FLP). High-energy deposition processes cause large disorder at the interface and thus a high level of FLP. Substantial improvements can be reached by low energy deposition techniques.

We report on the electrophoretic deposition (EPD) of metal nanoparticles (MNPs) prepared by the reverse micelle technique onto bulk substrates and epitaxial layers of InP, GaAs, InGaAs, GaN and ZnO and on their application in hydrogen sensor elements. We describe the role of the EPD conditions (time, polarity, applied voltage regime) on the quality of graphite/MNPs/InP Schottky barriers and their hydrogen sensing properties. We show that the SBH can be greatly increased and that Schottky-based hydrogen sensor elements with excellent sensitivity response can be fabricated.

The work was supported by the project COST LD12014 of the Ministry of Education CR and by the international collaboration project M100671201 of the ASCR.

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