Joint Fith International Conference on Solid State Crystals...

 on-line journal

Time
 Duration
 Type
 Presenting person
 Title

May 24th, Thursday

15:15 00:30:00 Invited oral Izabella Grzegory Growth anisotropy of GaN single crystals by high pressure and HVPE methods
15:45 00:30:00 Invited oral Fumio Orito Solvothermal Growth of Gallium Nitride Crystals
16:15 00:30:00 Invited oral Fumio Kawamura Growth of Large High-Quality GaN Crystals by Na Liquid Phase Epitaxy Method.
17:00 00:30:00 Invited oral Stephan Hussy Low dislocation density GaN-templates grown by the Low Pressure Solution Growth technique
17:30 00:30:00 Invited oral Chiaki Yokoyama Solubility of GaN in Acidic Supercritical Ammonia
18:30 00:15:00 Oral Robert Dwilinski Flat lattice of truly bulk ammonothermal GaN
18:45 00:30:00 Invited oral Boris Epelbaum Physical Vapor Transport Growth of Bulk AlN Crystals
19:15 00:30:00 Invited oral Takashi Matsuoka Mysterious material InN in nitride semiconductors - what's bandgap energy and its applications?

May 25th, Friday

08:30 00:30:00 Invited oral Toshihiko Hayashi Defect Control for Electric Property of SiC Crystals
09:00 00:30:00 Invited oral Thomas Straubinger Recent Progress in the Growth of 4H-SiC Bulk Crystals
10:00 00:30:00 Invited oral Detlef Klimm Melt Growth of Bulk Zinc Oxide
10:30 00:30:00 Invited oral Hiroshi Fujioka Room temperature epitaxial growth of group III nitrides
11:00 00:30:00 Invited oral Takafumi Yao Nanotechnology in GaN and ZnO growths for Novel Device Applications
12:00 00:30:00 Invited oral Wojciech Wierzchowski Synchrotron topographic investigation of SiC bulk crystals and epitaxial layers
12:30 00:30:00 Invited oral Koji Uematsu Low Dislocation density GaN Crystals by Advanced-DEEP
13:00 00:30:00 Invited oral Nobuhiko Sarukura Solid-state, ultraviolet, high-power laser system using a Ce: LiCAF gain medium
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