The ammonothermal growth of GaN basically is a process where a precursor and mineralizer is being combined in supercritical ammonia as solvent to achieve considerable solubility of GaN. Due to the high reactivity of acidic mineralizer such as ammonium chloride, platinum inner container was applied in an autoclave with the dimension of 100 mm in diameter and 1000 mm in height which is capable of growing 3-inch-diameter crystal. The purpose of this study is to investigate the industrialization of the ammonothermal technology of GaN with the diameter of 3 inch.

Computer aided simulation was utilized for designing the inner structure of the autoclave such as diameter/height aspect ratio and baffle position. The growth conditions were selected intending to be as closer to those of quartz crystal. The temperature range up to about 500 °C and the pressure up to 130 MPa were applied.

Self-standing substrates grown by H-VPE (Halide Vapour Phase Epitaxy) up to 2-inch-diameter were used as the seed crystals. Epitaxial Lateral Overgrowth was not applied for H-VPE for the seed crystals, therefore, uniform distribution of dislocation density in the range of 10 to the power of 6 was achieved. Quasi-transparent 2-inch –diameter crystal was grown.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/10582 must be provided.