High peak-power, femtosecond (fs), ultraviolet (UV) lasers have recently attracted new interest. Chirped pulse amplification (CPA) in the UV region has been previously demonstrated using Ce:LiCaAlF₆ (Ce:LiCAF) crystal as the gain medium. The peak power of the amplified and compressed pulse (115 fs) reached 30 GW at 290 nm. To increase the peak power to the terrawatt (TW) level, further pulse compression is desired. Since Ce:LiCAF has a tunability of 281 nm to 315 nm, it holds promise for 3-fs pulse generation which is required for seeding TW-class Ce:LiCAF lasers. The pulse width of the frequency-tripled Ti-sapphire regenerative amplifier was measured to be 210 fs. The seed pulses were then focused unto a hollow fiber filled with argon to spectrally broaden the pulses due to self phase-modulation.The pulses were then compressed to 25 fs by dispersion-compensation. The fourth harmonics of a Nd:YAG laser (266 nm) is an ideal pump source as it falls within the absorption band of Ce:LiCAF. We have previously generated 430 mJ of fourth hamonics with a total conversion efficiency of 30.5% using Li₂B₄O₇ (LB4) crystals. A Ce:LiCAF double-pass power amplifier was then designed with a peak energy of 98 mJ for a 13 mJ seed pulse and an extraction efficiency of 25%.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/10756 must be provided.

1. CZ growth of large sapphire single crystals up to 8 inch diameter 300 mm length for multiple applications 
2. Prospects for the μ-PD method and solvothermal method in electrical and optical crystal growth
3. Effect of temperature and mineralizer on phase stability and solubility of GaN under acidic ammonothermal conditions
4. Ammonothermal growth of thick gallium nitride films
5. Crystal growth and scintillating properties of (Ce, Sr)-doped PrAlO₃
6. Crystal growth and scintillating properties of (Pr, Si)-doped YAlO₃
7. Growth of Zinc Oxide Crystals and Their Scintillation Properties