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CZ growth of large sapphire single crystals up to 8 inch diameter 300 mm length for multiple applications
Fukuda X'tal Laboratory, c/o ICR 6-6-3, Minami Yoshinari, Aoba-ku, Sendai 981-3204, Japan
The Sapphire substrate market is fast growing and driven by multiple applications such as LEDs, The SOS devices, RF devices, Cover lens and Power devices.
In Fukuda Crystal Labs, according to requirements from customers having many different purposes, CZ sapphire crystal growth technology of 1 inch to 8 inch diameter were developed. CZ crystal growth is historically proven and remains the major technique for producing Si wafer due to quality and cost of ownership requirements. Sapphire wafers would follow that same way at a stand point market expansions and cost reductions for the multiple applications. The development for resistance heating furnaces with Mo crucible has also progressed for lower cost solution as a key to the future markets. After sophisticated examinations with a number of suppliers including fabrication equipment such as multi wire saw, 8 inch sapphire wafers are in ready to markets.
Our efforts and the technology features including summary of melting points and choice of crucibles is also reviewed in this talk.
Presentation: Invited oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 2, by Tsuguo Fukuda
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Submitted: 2013-05-14 05:13 Revised: 2013-05-14 05:35