Today Silicon Carbide (SiC) is recognized as an appropriate semiconductor for high power, high frequency and low loss devices application owing to its wide bandgap, high thermal conductivity and high breakdown field. However it was difficult to get the single crystal of a high quality until recently, because the properties of SiC, which has no liquid phase at practical pressure, obstruct an application of conventional semiconductor crystal growth experience.

Recently, the development of SiC crystal growth technology has brought about a large progress in the techniques of growing high-quality SiC boule crystal. And wafer size becomes large year by year too. Especially the density of micropipes, which are defects peculiar to SiC crystal, has been considerably decreased in these past several years. While huge crystal defect such as micropipes and small grain boundaries are decreased, small defects such as dislocations and point defect are outstanding. And these defects have bad influence on an electric property of semiconductor devices. But the correlation with some kinds of defects and electrical properties is not known clearly yet and the methods of detection and evaluation of defects are also important. It is desirable to analyze the whole wafer region, by non-destructively, for a short time.

In this presentation, a typical defect of SiC crystal is discussed with the detection and evaluation method, and is also discussed with the influence to electric property of electronic devices.

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