Mn doped ZnTe (110) (1x1) surface in Resonant Photoemission study

Bronislaw A. Orlowski 2Sigitas Mickevicius 1B. J. Kowalski 2Iwona A. Kowalik 2Krzysztof Kopalko Andrzej Mycielski 2R. L. Johnson 3

1. Semiconductor Physics Institute, A.Gostauto 11, Vilnius LT-2600, Lithuania
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. University of Hamburg, Institute for Experimental Physics, Luruper Chausse 149, Hamburg D-22761, Germany


Diluted magnetic semiconductors (DMS) are most interesting materials for spintronic application [1]due to s-p-d interaction of 3d electrons with the s-p valence electrons of the volume(3D)and surface(2D)of the crystal. Photoemission study of the valence band electronic structure for clean, freshly cleaved (110) relaxed 1x1 surface of ZnTe crystals and for these surface after sequentially deposited on it small and controlled amount of Mn atoms were performed. The crystalline samples of ZnTe was grown in the Institute of Physics, PAS in Warsaw and oriented as parallelepiped (10 x 5 x 5 mm3 )with the cleavage plane parallel to the 5 x 5 plane. The Flipper II beam line of the synchrotron radiation in HASYLAB was used. The clean surface of ZnTe (110) was obtained by the cleavage and LEED study shows the (1x1) patterns. The analysis of: constant initial state, energy distribution curves, Zn 3d and Te 4d core level spectra showed that at very low Mn coverage (< 0.15 nm) manganese interaction with ZnTe results in the creation of the Zn1-xMnxTe (110) surface ternary alloy. Further deposition of Mn atoms leads to the formation of the metallic manganese on the surface. The successive annealing leads to the diffusion of Mn atoms and to the formation of DMS at the surface region. The experimental results were compared to the calculated electronic band structure of Zn1-xMnxTe crystals.
This work was supported in part within: European Commission IHP-Contract HPRI-CT-1999-00040/2001- 00140; and KBN SPUB-M/DESY/P-03/DZ-213/2000;and European Community program G1MA-CT-2002-4017 (Center of Excellence CEPHEUS).
[1]. T. Dietl, Physica E 10, 120 (2001)

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Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Bronislaw A. Orlowski
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-05 16:16
Revised:   2009-06-08 12:55
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