Dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by Atomic Layer Deposition

Łukasz Wachnicki 1Małgorzata I. Łukasiewicz 1Tomasz A. Krajewski 1Grzegorz Łuka 1Bogdan J. Kowalski 1Bartłomiej S. Witkowski 2Krzysztof Kopalko 1Ewa Przezdziecka 1Jaroslaw Domagala 1Marek Godlewski 1,2Elżbieta Guziewicz 1

1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
2. Cardinal Stefan Wyszynski University, College of Science, Warszawa, Poland

A new area in the semiconductor technology is related to the change of the device architecture from planar to three-dimensional [1]. This imposes critical restrictions on temperature of the semiconductor processing as in 3D structures metal passes are placed not only at the top, but also below of the device. Typical temperature limit here is 350 0C. This temperature is much lower than typically used in the silicon technology, therefore a lot of efforts is focused now on new materials, which can be grown inside the above temperature limit.

One of them is zinc oxide, which is a II-VI semiconductor with a direct energy gap of 3.37 eV at room temperature. At present, ZnO has many potential applications as solar cells, piezoelectric transducers, ultraviolet light emitters or gas sensors. We show that zinc oxide is also an appropriate material for 3D applications, because monocrystalline ZnO layers can be obtained at temperature below 3000C.

 We present structural, morphological and optical properties of zinc oxide thin films grown by the Atomic Layer Deposition method at the temperature range between 200 0C and 350 0C. ZnO layers were deposited on a gallium nitride substrate using water as an oxygen precursor and diethylzinc or dimethylzinc as a zinc precursor. The obtained ZnO films show bright luminescence of excitonic origin. Defect-related luminescence bands observed in red and green spectral regions are correlated with the composition measured by the EDX analysis. A high resolution X-ray diffraction proves that our zinc oxide films are monocrystalline with FWHM of 00.2 peak equal to230 arcsec.

The work was partially supported by EU within the European Regional Development Found thorough grant Innovative Economy No. POIG.01.01.02-00-008/08.

[1] M. Godlewski et al., Microel.Eng. 85, 2434 (2008)

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Presentation: Oral at E-MRS Fall Meeting 2009, Symposium C, by Łukasz Wachnicki
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-08 14:22
Revised:   2013-02-28 15:04
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