Water absorption by epitaxial LaNiO3-x thin films

Sigitas Mickevicius 1Vladimir Bondarenka 1Sergej Grebinskij 1Vaclovas Lisauskas 1Kristina Sliuziene 1Henrikas Tvardauskas 1Bonifacas Vengalis 1Bronislaw A. Orlowski 2Victor Osinniy 2Wolfgang Drube 3

1. Semiconductor Physics Institute, A.Gostauto 11, Vilnius LT-2600, Lithuania
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. Hamburger Synchrotronstrahlungslabor HASYLAB (HASYLAB), Notkestrasse 85, Hamburg D-22603, Germany


LaNiO3 is one of conductive oxides with a crystal structure suitable for integration in epitaxial heterostructures with perovskites of enormous technological potential such as colossal magnetoresistance materials, high-temperature superconductors and ferroelectrics. The surface segregation of elements and possible hydrooxidation of LaNiO3-x films were studied by means of Tunable High-Energy X-ray photoelectron spectroscopy using synchrotron radiation. Epitaxial LaNiO3-x films deposited onto (100)-plane oriented NdGdO3 substrate was obtained by using a reactive DC magnetron sputtering technique and demonstrate the excellent in-plane orientation and the surface La/Ni ratio close to the bulk stoichiometric value. The films were examined at different angles to distinguish between the chemical state of lanthanum and nickel species at the surface and slightly deeper into the material. The evident difference were observed between spectra measured at normal (Θ = 0°) and grazing (Θ = 89.3°) take-off angles, indicating that the significant alteration of the film chemical composition take place within thin (scanning depth ~ 3 nm) surface layer. Both core and satellite peaks were used for the identification of the chemical state of elements and further quantitative analysis. It was shown, that the hydroxyl-containing phase, located near the film surface may be attributed to the lanthanum and nickel hydroxide species. For the all spectral lines in question hydroxide/oxide peaks intensity ratio strongly affected by the geometry of the experiment, thus directly indicating that the thickness of the hydroxide enriched layer is of about few nanometers. The more quantitative analyses were carried out assuming the exponential and step spatial distributions of hydroxide species concentration within the bulk of the film. The thickness of about 2 nm for hydroxide enriched layer, was estimated from the oxide and hydroxide peak intensities ratio.


Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/11254 must be provided.


Related papers
  1. Resonant photoemission study of Sm atoms on ZnO surface
  2. X-ray photoemission from CdTe/PbTe/CdTe nanostructure in normal and grazing-incidence modes
  3. Thermal diffusion of a thin Mn film into ZnO(000-1) probed by High Energy X-ray Photoelectron Spectroscopy
  4. Diffusion profiles of transition metals (TM= Co or Mn) in ZnO and GaN incorporated by annealing of thin TM film
  5. ZnO thin films for organic/inorganic heterojunctions
  6. Gd atoms on Si (111) surface – AFM and photoemission study
  7. Mn 3d electrons in the valence band of Mn/Ge0.9Mn0.1Te- a resonant photoemission study
  8. Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
  9. The metals chemical states in hydrated vanadium oxides
  10. Electronic Structure of Pd Nanoparticles on Carbon Nanotubes
  11. Functionalization of MWCNTs Using Atomic Nitrogen: Effects on Electronic Structure
  12. Effect of annealing on electrical properties of low temperature ZnO films
  13. Ferromagnetism in ZnO:Mn thin films deposited by PEMOCVD
  14. Electrical and magnetic properties of p-n diode structures based on lanthanum manganites and Nb-doped SrTiO3
  15. Ferromagnetic (Eu,Gd)Te/PbTe semiconductor heterostructures
  16. Magnetization study of interlayer exchange in semiconductor EuS-PbS ferromagnetic wedge multilayers
  17. Oxide Heterostructures Based on Fe3O4 Thin Films
  18. Investigation of epitaxial LaNiO3-x thin films by High-Energy XPS
  19. GaN(0001) surface Fe atoms doped
  20. Structural and optical characterization of epitaxial layers of CdTe/PbTe grown on BaF2 (111) substrates
  21. Interaction of Mn and Ti atoms with GaN surface - a resonant photoemission study
  22. Photoemission study of the LT-GaAs
  23. Growth and investigation of oxide heterostructures containing half-metallic Fe3O4
  24. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
  25. Determination of vanadium valence in hydrated compounds
  26. Mn doped ZnTe (110) (1x1) surface in Resonant Photoemission study
  27. Differential Reflectivity and Photoemission study of ZnTe and CdTe(110) surface

Presentation: Poster at E-MRS Fall Meeting 2007, Symposium J, by Sigitas Mickevicius
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-11 09:24
Revised:   2009-06-07 00:44