Photoemission study of the LT-GaAs

Sigitas Mickevicius 1,  Janusz Sadowski 2,3,4,  Saulius Balakauskas 1,  Maks Leanderson 3

1. Semiconductor Physics Institute, A.Gostauto 11, Vilnius LT-2600, Lithuania
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. Lund University, MAX-lab, Lund SE-221 00, Sweden
4. Chalmers University of Technology, Göteborg S-412 96, Sweden

Abstract

Low - temperature (LT) molecular beam epitaxy-grown (MBE) GaAs have found many applications in ultrafast, integrated optoelectronic photoswitces and photodetectors. Such layers of GaAs grown by MBE at LT conditions under the arsenic rich flux exibit unique properties, such as ultrashort carrier lifetimes and high resistivity after annealing.
The object of this study - LT-MBE grown GaAs (100) at one temperature and at different As flux conditions by means of angle-resolved photoemission spectroscopy.
The experiment was performed on the toroidal grating monochromator beamline (BL 41) at the MAX I storage ring. A dedicated MBE system is connected to the electron spectrometer, allowing the between the units under ultrahigh vacuum conditions. The valence band spectra for samples prepared at different As flux conditions show very similar features. The peak related with interband transition shifts toward low binding energies, when As flux increase. That can be relate with the change of lattice constant in the LT-GaAs due to increasing of the density of AsGa antisites with increasing As flux. To identify surface and bulk contribution the Ga 3d and As 3d corel level spectra were taken at different photon energies and take off angles. In Ga 3d spectra appear a new component in compare with HT-GaAs dependents on As flux ratio and is bulk derived. This component origin is bonded with high density of AsGa antisite point defects in LT-GaAs [1].

Acknowledgment: This work was supported by the European Community-Access to Research Infrastructure of the Improving Human Potential Programme.

[1]. H. Asklund, L. Ilver, J. Kanski, J. Sadowski, M. Karlsteen, Phys. Rev. B 65, 115335 (2002).

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: http://science24.com/paper/1044 must be provided.

 

Related papers
  1. Critical exponents of dilute ferromagnetic semiconductors (Ga,Mn)N and (Ga,Mn)As
  2. Optical properties of GaAs:Mn nanowires
  3. Photoreflectance study of Ga(Bi,As) and (Ga,Mn)As epitaxial layers grown under tensile and compressive strain
  4. MBE growth, structural, magnetic, and electric properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires
  5. Quaternary (Ga,Mn)BiAs ferromagnetic semiconductor -MBE growth, structural and magnetic properties
  6. Stany Mn 3d w paśmie walencyjnym Ga1-xMnxSb
  7. X-ray photoemission from CdTe/PbTe/CdTe nanostructure in normal and grazing-incidence modes
  8. Can we control the process of room temperature ferromagnetic clusters formation in GaMnAs matrix?
  9. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
  10. Electronic structure of Mn atoms in (Ga,Mn)As layers modified by high temperature annealing
  11. Effect of high pressure annealing on defect structure of GaMnAs
  12. Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
  13. Water absorption by epitaxial LaNiO3-x thin films
  14. The metals chemical states in hydrated vanadium oxides
  15. Catalytic growth by molecular beam epitaxy and properties of ZnTe-based semiconductor nanowires
  16. Effect of stress on structural transformations in GaMnAs
  17. Tunneling Anisotropic Magnetoresistance effect in p+-(Ga,Mn)As/n+-GaAs Esaki diode structure.
  18. Formation of epitaxial MnSb and MnBi layers on GaMnAs
  19. Magnetotransport properties of ultrathin GaMnAs layers
  20. Giant planar Hall effect in ferromagnetic (Ga,Mn)As layers
  21. Magneto-conductance through nanoconstriction in ferromagnetic (Ga,Mn)As film
  22. Investigation of epitaxial LaNiO3-x thin films by High-Energy XPS
  23. Interaction of Mn and Ti atoms with GaN surface - a resonant photoemission study
  24. Defects in GaMnAs - influence of annealing and growth conditions
  25. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
  26. Lattice parameters changes of GaMnAs layers induced by annealing
  27. Determination of vanadium valence in hydrated compounds
  28. Mn doped ZnTe (110) (1x1) surface in Resonant Photoemission study

Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Sigitas Mickevicius
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-06-09 14:19
Revised:   2009-06-08 12:55
Google
 
Web science24.com
© 1998-2022 pielaszek research, all rights reserved Powered by the Conference Engine