Photoemission study of the LT-GaAs
|Sigitas Mickevicius 1, Janusz Sadowski 2,3,4, Saulius Balakauskas 1, Maks Leanderson 3|
1. Semiconductor Physics Institute, A.Gostauto 11, Vilnius LT-2600, Lithuania
Low - temperature (LT) molecular beam epitaxy-grown (MBE) GaAs have found many applications in ultrafast, integrated optoelectronic photoswitces and photodetectors. Such layers of GaAs grown by MBE at LT conditions under the arsenic rich flux exibit unique properties, such as ultrashort carrier lifetimes and high resistivity after annealing.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Sigitas Mickevicius
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-06-09 14:19 Revised: 2009-06-08 12:55
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