SEM studies of the etched surface of (Cd,Mn)Te
|Dominika M. Kochanowska 1, Marcin Rasiński 2, Marta Witkowska-Baran 1, Malgorzata Lewandowska 2, Andrzej Mycielski 1|
1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
(Cd,Mn)Te crystals grown by Low Pressure Bridgman method were investigated by Scanning Electron Microscopy. Various samples cut from different parts of the crystal (corresponding to different stages of crystal growth process), were lapped, and mechano-chemically polished. Such prepared samples were treated by HF:HNO3:acetic acid solution to discover polarity and discriminate twins . After that treatment defects, like grain boundaries, twin planes and tellurium inclusions are more visible  compared to a non-etched surface.
Structural defects such as grains, twin and precipitates form during the crystal growth. Controlling the growth process conditions such as: source material preparation, material stoichiometry, temperature profile on the furnace, supercooling and superheating, growth velocity and cooling rate, – affects the crystal quality.
In this work we want to present our results from the different crystal growth processes and compare the quality of the obtained samples. The study is focused on finding the types and the nature of the defects in our crystals. This knowledge helps us to obtain monocrystalline samples for our studies.
This work was partially supported by the European Union within the European Regional Development Fund POIG 01.01.02-00-108/09. D. K. wants to express her gratitude for the support from the EU's European Social Found, in the frame of the System Project of the Local Government of the Mazowieckie Voivodeship, through grants for PhD students (agreement No. 90/ES/ZS-II/W-2151.1/11).
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 J. Zhang, W. Jie, L. Wang, L. Luan, Cryst. Res. Technol. 45, No. 1, 7-12 (2010).
Presentation: Poster at 15th Summer School on Crystal Growth - ISSCG-15, by Dominika M. Kochanowska
See On-line Journal of 15th Summer School on Crystal Growth - ISSCG-15
Submitted: 2013-04-29 14:20 Revised: 2013-04-29 15:15