Current Trends in Optical and X-ray Metrology of Advanced Materials and Devices II
This E-MRS symposium is aimed to:
- give an overview of the current status of optical and x-ray metrology for materials characterization and quality assurance of thin films, layer-structured materials, and one-dimensional nanomaterials, with a particular emphasis on state-of-the-art metrology
- promote and encourage the interaction between academic and industrial research (instrument manufacture, IC and optoelectronics industry and materials suppliers) to address scientific and technological challenges associated with the improvement of standard analytical methods and qualification of newer techniques.
First we would like to highlight the trends and advances in the techniques of optical and X-ray metrology for thin film materials, nanowires and nanotubes and secondly, we will address the application of such techniques to the study of thin-layered, wide band gap nitrides and functional oxide films (high-k dielectrics, ferroelectrics, ZnO and novel p-type transparent conductive oxides), as well as nanotubes and nanowires based on these materials.
As manufacturing processes become more complicated, it is imperative to employ in-situ metrology; this is particularly true in the microelectronics and micro-systems industry, such as compound semiconductor electronics, photonics, MEMS and sensors.
Among the various X-ray-based methods, standard X-ray diffractometry, X-ray reflectivity and diffuse scattering are acquiring an increasing relevance for characterization of materials and devices in academic and industrial laboratories, since these techniques are rapid, high resolution, non-destructive and non-contacting. In addition, the availability of high brilliance X-ray Synchrotron sources and the recent development of new X-ray scattering techniques offers new opportunities for non-destructive characterization of microstructures and the unique opportunity of characterization of micrometer-sized (or smaller) objects.
The current trends in optical metrology mainly concern spectroscopic ellipsometry (SE), polarisation and modulation spectroscopy, anisotropic reflectance and Near Field Optical Microscopy (NanoRaman, SERS, TERS).
Both optical and X-ray related techniques have gained considerable interest in the last decade and are currently involved in the characterization of thin film materials and nanomaterials. In this symposium, these methods will be discussed with particular attention paid to their application, as well as their limitations and complementarities.
- Trends and advances in optical and X-ray metrology for thin film materials (nitrides and functional oxides) qualification, for microelectronics, optoelectronics, and microsystems, including the application concerning the larger integration on Si.
- Trends and advances in optical and X-ray metrology for nanotubes and nanowires (nitrides and functional oxides) qualification, for microelectronics, optoelectronics, and microsystems
- Optical and X-ray characterization of novel nanomaterials and heterostructures including novel n-type and p-type transparent conductive oxides, wide band gap nitrides, high-k materials and ferroelectrics, organic materials for OLED applications, GaN and diluted nitrides.
- Advances in numerical method-based procedures for X-ray reflectivity and diffraction data interpretation.
- Metrology physics - light/matter interaction, including interferometry, near field and transient based optical probing.
- Advances in the development of generalized ellipsometry and real-time ellipsometry, in modulation and anisotropic reflectance spectroscopy and in Near-Field Optical Microscopy (NanoRaman, SERS, TERS).
- Advances in X-ray diffractometry, X-ray diffuse scattering and reflectometry applied to thin-layered materials for microelectronics, optoelectronics and microsystems.
- Recent development, using X-ray Synchrotron sources, of new X-ray scattering techniques for non-destructive characterization of thin-layered materials and of micrometer-sized (or smaller) objects.
- Spatially resolved techniques for the investigation of small objects and micro-devices.
- Real time in situ diagnosis & control during growth (stress & strain measurements, alloy composition & growth rate determination...) and/or complex stacked structure elaboration (e.g., metal/interface/dielectric/ interface/substrate).
- Characterization of III-N based optoelectronic devices (VCSEL, LED, QCL, OPO) and nitride-based transistors (HBT, HEMT).
- Characterization of microelectronic devices by scatterometry and polarimetric methods-determination of critical dimensions.
- Examination of critical dimensions in lithography using real time polarization optics.
Symposium Workshop: “Novel p-type transparent conductive oxides”, organized in conjunction with the EU project NATCO FP6-511925
Student Awards: E’MRS Graduate Student Awards are intended to honour and encourage graduate students whose academic achievements and current materials research display a high level of excellence and distinction.
Symposium proceedings: To be published in Thin Solid Films (Elsevier)
List of invited speakers/talks, additional invited talk may be selected from the outstanding submitted papers
Vaclav Holy (Masaryk Univ., Czech Republic)
Alain Gibaud (Univ. du Maine, France)
Davor Balzar (NIST, USA)
John Budai (ORNL, USA)
Ullrich Pietsh (Siegen University, Germany)
James Hilfiker (JAWoollam Co., USA)
Daniel Lübbert (Forschungszentrum Karlsruhe, Germany)
Grzegorz Sęk (Wrocław University of Technology, Poland)
Poul-Erik Hansen (Danish Fundamental Metrology, Denmark)
Scientific committee members:
B. Drevillon (Ecole Polytechnique, France), S. Logothetidis (Aristotle University of Thessaloniki, Greece), J. Hosea (Univ. Surrey, UK), J. Humlicek (Univ. Brno, Czech Republic), T. Lohner (Academy of Science, Hungary), N.Tomozeiu (Oce, Holland), T. Baumbach (FZK, Germany), M.Losurdo (IMIP-CNR, Italy), D.Chateigner (CRISMAT-ENSICAEN, France) M.Gartner (Romanian Academy, Romania), B. Servet (Thales, France), J. Misievicz (Univ. Wroclaw, Poland), S.Bosch (Universitat de Barcelona, Spain), E. Zolotoyabko (Technion, Israel), Marie-Antoinette Poisson (Alcatel-Thales III-V lab), J. Bak-Misiuk (Polish Academy of Science)
Tyndall National Institute
Lee Maltings, Prospect Row,
Thales Research and Technology France
Route departementale 128
F-91767 Palaiseau Cedex
Tel: 33(0)1 69 41 57 78
Fax: 33(0)1 69 41 57 38
Dr.Gerald E. Jellison
Materials Science and Technology Division
Oak Ridge National Laboratory
Tel: +865 576-7309
Fax: +865 574-4143
CRHEA/CNRS (and Alcatel/Thales 3-5 lab)
Rue B. Gregory, Sophia Antipolis
06560 VALBONNE, France
Tel: 33 (0) 4 93 95 42 14
Fax: 33 (0) 4 93 95 83 61