Technique of atomic layer deposition (ALD) was developed by Dr. Suntola in Helsinki, Finland. ALD is a version of chemical vapor deposition (CVD) technique, in which reaction precursors are alternatively introduced to a growth chamber separated by purging periods with a neutral gas. Consequently, a better control of the growth is achieved and the films are exceptionally conformal and smooth. The method allows a wider reactivity range of precursors than conventional CVD, since they meet only at a surface of a grown film, and also enables large area coverage. Low costs of the method are advantageous as well.

The conferences on atomic layer deposition (ALD) to thin films technology have been held regularly since 1990. This is a booming field of thin film technology as ALD is presently used to produce practical devices, such as thin film electroluminescence displays and solar cells. ALD is also the most promising method to deposit high k dielectric films replacing SiO 2 in next-generation microelectronic devices. ALD may also be applied in technology of spintronics materials – a new, very promising area of electronics. These applications explain rapidly increasing interest in the ALD method.


ALD-2007 will cover the following topics:

  • ALD precursors
  • Surface chemistry of ALD
  • In-situ monitoring of ALD
  • Modeling of ALD
  • Surface modification for ALD initiation
  • Enhanced ALD using radicals, photons or electrons
  • ALD on high aspect ratio structures
  • Metal deposition by ALD
  • Nanolaminates grown using ALD
  • ALD on/of nanostructures
  • Particle modification using ALD
  • ALD rate enhancement and process optimization
  • High-k gate dielectrics and gate metals deposited using ALD
  • ALD nanolaminate dielectrics for DRAM
  • ALD interconnect diffusion barriers
  • ALD of multicomponent oxides (e.g. perovskites)
  • ALD tools for manufacturing
  • Electrical assessment and reliability of ALD layers
  • Selective area growth of ALD
  • New application areas of ALD
  • Liquid phase analogues of ALD (SILAR, ECALE, VALID and ILGAR)
  • ALD of new materials/structures (silicides, multilayers, particles).
  • ALD of epitaxial thin films
  • Control of interfaces in ALD
  • ALD in optics
  • Thin film photovoltaic

New developments in ALD method (new procedures, precursors and reactors) will be presented together with their applications to technology of thin films of semiconductors, metals and dielectric.

List of confirmed invited speakers

  • Prof. P. Chalker - Materials Science and Engineering Department, University of Liverpool, United Kingdom, Development of precursors for the ALD of high-k dielectric oxides
  • Dr. S. D. Elliot - Tyndall National Institute, Ireland, Ab initio precursor design for rare earth oxide ALD
  • Prof. M. Fanciulli - MDM Laboratory CNR-INFM MDM National Laboratory, Italy, New ALD processes for high-k oxides
  • Dr. Sandro Ferrari - MDM Laboratory CNR-INFM MDM National Laboratory, Italy, Atomic Layer Deposited Al 2O 3 on semiconducting polymers for plastic electronics
  • Prof. R. Gordon - Harvard University, USA, ALD of High-k Dielectrics and Metal Electrodes
  • Dr. E. Guziewicz - Inst. of Physics, Polish Acad. Sci., Warsaw, Poland, White light emitting ZnSe
  • Prof. A. Harsta - Uppsala University, Sweden, Template-based synthesis of single- and multi-layered metal oxide nanotubes using ALD
  • Prof. Cheol Seong Hwang - Seoul National University, Korea, TiO 2 and doped TiO 2 thin films for next generation DRAMs
  • Dr. W. M. M. Kessels - Eindhoven University of Technology, The Netherlands , Remote plasma ALD of oxides and nitrides: fundamentals and applications
  • Dr. Mato Knez - Max-Planck-Institut fuer Mikrostrukturphysik, Germany, (Bio)organic-inorganic hybrid nanostructures by ALD
  • Dr. Kaupo Kukli - University of Tartu /University of Helsinki Estonia/Finland, Electrical properties of high-k materials prepared by ALD
  • Dr. Kornelius Nielsch - Max-Planck-Institut fuer Mikrostrukturphysik, Germany, Ferromagnetic Nanostructures by Atomic Layer Deposition: From Thin Films Towards Multifunctional Nanotubes
  • Prof. Lauri Niinisto – Technical University of Helsinki, Finland, New ALD processes
  • Prof Mikko Ritala - Laboratory of Inorganic Chemistry, University of Helsinki, Helsinki, Finland, ALD of TiO 2 based photocatalysts
  • Dr. Aleksandra Wójcik - Inst. of Physics, Polish Acad. Sci., Warsaw, Poland, Low temperature ZnMnO by ALD


Principal organizers (Chair)
  • Prof. Marek Godlewski, Institute of Physics, Polish Academy of Sciences, Warsaw, Poland


  • Dr. Adam Zakrzewski, Institute of Physics, Polish Academy of Sciences, Warsaw, Poland

Co –organizers (co-chairs):

  • Prof. Markku Leskelä, Helsinki University, Finland;
  • Dr. Ola Nilsen, University of Oslo, Norway;
  • Res. Jaan Aarik, University of Tartu, Estonia


Following tradition of the last BALD Meeting on Atomic Layer Deposition held in Oslo in 2006 (see http://www.kjemi.uio.no/bald2006/) materials presented during the Symposium will be collected as pdf files on DVD disks ditributed among the Symposium participants.

Authors of all presentations will be kindly ask to send pdf files with their invited, oral presentations as well as posters to the organizers prior to the Symposium.


Dr. Adam Zakrzewski
Institute of Physics
Polish Academy of Sciences
02-668 Warsaw, Al. Lotników 32/46, Poland
(correspondence address: ale07@ifpan.edu.pl)